SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3638
TO-252
Unit: mm
Features
+0.15
6.50
-0.15
+0.1
2.30
-0.1
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-state resistance
RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 1100 pF TYP.
Built-in gate protection diode
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
20
20
Gate to source voltage
V
A
64
Drain current
Idp *
A
220
36
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=20V,VGS=0
Gate leakage current
Gate cut off voltage
IGSS
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=32A
VGS=10V,ID=32A
VGS=4.5V,ID=18A
10
A
VGS(off)
1.5
12
2.5
V
Forward transfer admittance
25
6.8
10
S
Yfs
RDS(on)1
8.5
15
m
Drain to source on-state resistance
RDS(on)2
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
1100
450
170
10
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
4.3
35
ID=32A,VGS(on)=10V,RG=0 ,VDD=10V
Turn-off delay time
Fall time
toff
tf
9.7
22
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDD = 16V
VGS = 10 V
ID =64A
4.3
5.1
1
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