SMD Type
MOSFICET
Silicon N-Channel Power F-MOSFET
2SK3022
Features
TO-252
Avalanche energy capacity guaranteed
High-speed switching
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low ON-resistance
No secondary breakdown
Low-voltage drive
0.127
max
+0.1
0.80
-0.1
High electrostatic breakdown voltage
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
Gate to source voltage
V
20
A
5
Drain current
Idp *
A
10
10
Power dissipation
TC=25
TA=25
PD
W
1
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID=1mA,VGS=0
Min
60
Typ
Max
Unit
V
Drain to source breakdown voltage
Drain cut-off current
VDSS
IDSS
IGSS
Vth
VDS=40V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=3A
VGS=10V,ID=3A
VGS=4V,ID=3A
10
10
A
Gate leakage current
A
Gate threshold voltage
Forward transfer admittance
1
2
2.5
V
4
S
Yfs
90
135
200
m
Drain to source on-state resistance
RDS(on)
130
220
90
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
50
15
30
ID=3A,VGS(on)=10V,RL=10 ,VDD=30V
Turn-off delay time
Fall time
toff
tf
170
550
1
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