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2SK3094

型号:

2SK3094

描述:

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

3 页

PDF大小:

44 K

Ordering number : EN8623  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3094  
Features  
High-speed switching.  
Low ON-resistance.  
15V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
400  
±30  
5.5  
22  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
A
DP  
P
Tc=25°C  
55  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
400  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
V
mA  
nA  
V
(BR)DSS  
D
GS  
=320V, V =0V  
I
I
V
V
V
V
1.0  
±100  
4.0  
DSS  
DS  
GS  
DS  
DS  
GS  
= ±30V, V =0V  
DS  
GSS  
V
(off)  
GS  
=10V, I =1mA  
3.0  
1.3  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
yfs  
=10V, I =2.8A  
2.6  
S
D
R
(on)  
DS  
I
=2.8A, V =15V  
GS  
0.92  
660  
170  
80  
1.2  
Ω
D
Ciss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
pF  
pF  
pF  
DS  
DS  
DS  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
30310QB TK IM TA-1543 No.8623-1/3  
2SK3094  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Total Gate Charge  
Turn-ON Delay Time  
Rise Time  
Qg  
t (on)  
V
=200V, I =5.5A, V =10V  
GS  
20  
nC  
ns  
ns  
ns  
ns  
V
DS  
D
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
14  
15  
45  
25  
d
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Diode Forward Voltage  
V
I
=5.5A, V =0V  
1.2  
SD  
S GS  
Package Dimensions  
unit : mm (typ)  
Switching Time Test Circuit  
7507-002  
V
=200V  
DD  
4.5  
10.2  
3.6  
5.1  
1.3  
I
=2.8A  
D
V
=15V  
GS  
R =71.4Ω  
L
D
V
OUT  
PW=10μs  
D.C.0.5%  
G
R
2SK3094  
S
1.2  
GS  
P.G  
50Ω  
0.8  
0.4  
1
2 3  
1 : Gate  
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : TO-220  
A S O  
P
-- Tc  
D
5
60  
55  
50  
3
2
I
=22A (PW10μs)  
DP  
10  
I
=5.5A  
7
5
D
40  
30  
20  
3
2
1.0  
7
5
Operation in this  
area is limited by R (on).  
DS  
3
2
10  
0
Tc=25°C  
Single pulse  
0.1  
0.1  
2
3
5 7  
2
3
5 7  
2
3
5 7  
100  
2
3
5
7
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
Drain-to-Source Voltage, V  
DS  
-- V  
IT15413  
IT15414  
Case Temperature, Tc -- °C  
No.8623-2/3  
2SK3094  
Note on usage : Since the 2SK3094 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of March, 2010. Specifications and information herein are subject  
to change without notice.  
PS No.8623-3/3  
厂商 型号 描述 页数 下载

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2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

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PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

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2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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