MOS FET 2SK3801
Absolute Maximum Ratings (Ta=25ºC)
Electrical Characteristics
External Dimensions TO-3P
(Ta=25ºC)
Unit
Ratings
typ
Symbol
Ratings
40
Unit
V
0.4
Symbol
Test Conditions
15.6
0.2
min
40
max
V
DSS
4.8
13.6
9.6
0.1
V
GSS
20
V
I
D
= 100µA, V = 0 V
V
(BR) DSS
GS
V
2.0
V
=
15V
I
70
140
A
I
I
V
GS
10
100
4.0
µA
µA
V
S
D
GSS
1
V
V
= 40V,
= 10V,
= 10V,
= 10V,
V
GS
= 0 V
I
*
A
DS
D (pulse)
DSS
P
D
I
= 1mA
= 35A
= 35A
2.0
30
3.0
50
100 (Tc=25ºC)
400
W
mJ
ºC
ºC
TH
DS
D
0.1
a
b
3.2
1
EAS
*
Re
R
V
I
D
(yfs)
DS
GS
T
V
I
D
5.0
6.0
mΩ
pF
pF
pF
ns
150
ch
DS (ON)
Tstg
5100
1200
860
100
100
300
130
0.9
–40 to +150
Ciss
Coss
Crss
V
= 10V
DS
2
f =1.0MHz
= 0 V
*
*
1: PW 100µs, duty cycle 1%
2: VDD = 20V, L =1mH, IL = 20A, unclamped,
RG = 50Ω
3
V
GS
0.65–+00..12
1.4
1.05–+00..12
t
t
t
t
d (on)
I
D
= 35A
0.1
0.1
ns
r
5.45
5.45
V
DD
= 20V,
R = 2 2 Ω
G
ns
d (off)
f
0.2
15.8
R
L
= 0.57Ω,
V = 10V
GS
a) Part No.
b) Lot No.
ns
1. Gate
2. Drain
3. Source
V
ns
V
t
I
SD
= 50A, V = 0 V
1.5
SD
GS
(Unit: mm)
(1) (2) (3)
I
= 25A, di/dt =50A/µs
100
rr
SD
R
R
1.25
°C/W
°C/W
th (ch-c)
th (ch-a)
35.71
—
Characteristics (typ.)
—
GS Characteristics (typ.)
—
GS Characteristics (typ.)
—
D Characteristics (typ.)
(VDS = 10V)
■ ID VDS
■ ID
V
■ VDS
V
■ Re (yfs)
I
(Ta= 25ºC)
(VDS = 10V)
1.0
0.8
0.6
0.4
0.2
0
1000
70
70
60
50
40
30
20
10
0
60
50
40
30
20
10
Tc= –55°C
25°C
10V
5.5V
5.0V
100
10
150°C
VGS = 4.5V
Ta= 150°C
25°C
ID = 70A
35A
–55°C
1
1
0
0
0.5
1.0
1.5
2.0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
0
5
10
15
20
10
70
VDS (V)
VGS (V)
VGS (V)
ID (A)
—
Characteristics (typ.)
—
Characteristics (typ.)
j-c — Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.)
■
■ RDS (ON) ID
■ RDS (ON) TC
■
Ta= 25ºC
VGS = 10V
ID = 35A
GS = 10V
V
(ID = 35A)
30
20
10
0
15
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10.0
10
VDS
8.0
6.0
4.0
2.0
0
10
5
1
VGS
VDD = 8V
12V
14V
0.1
16V
24V
0.01
0
150
0.00001 0.0001 0.001 0.01
0.1
1
10
100
0
50
100
0
10 20 30 40 50 60 70
–60 –50
0
50
100
150
ID (A)
Tc (ºC)
Pw (s)
Qg (nC)
Capacitance— VDS Characteristics (typ.)
—
SD Characteristics (typ.)
Safe Operating Area (single pulse)
—
C Characteristics
T
■
■ IDR
V
■
■ PD
(Ta= 25ºC)
(Ta= 25ºC)
50000
70
500
120
VGS = 0V
f= 1MHz
60
50
40
30
20
10
0
100
80
60
40
20
0
100
10
1
10000
Ciss
Ta= 150°C
25°C
1000
Coss
–55°C
Crss
0.1
0.1
100
0
20 40 60 80 100 120 140 160
1
10
100
0
10
20
30
40
50
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS (V)
VSD (V)
VDS (V)
Tc (ºC)
112
