SMD Type
MOSFET
2SK3018
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
Typ Max
Unit
ìA
V
Gate-source leakage
IGSS
1
VGS =±20 V , VDS = 0 V
±
Drain-source Breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V(BR)DSS ID= 10 ìA, VGS = 0V
30
IDSS VDS = 30 V, VGS = 0V
1
ìA
V
VGS(th) VDS = 3 V, ID= 100 ìA
0.8
1.5
ID= 10 mA, VGS = 4V
RDS(on)
5
7
8
Static drain-source on-state resistance
Ω
ID= 1mA, VGS = 2.5V
13
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
Coss
Crss
td(on)
tr
VDS = 3 V, ID= 10 mA
VDS = 5 V,
20
mS
pF
pF
pF
ns
ns
ns
ns
13
9
VDS = 0 V,
f= 1MHz
4
ID= 10 mA, VDD= 5 V,
VGS= 5 V,
15
35
80
80
Turn-off time
td(off)
tr
RL=500Ω
Fall time
RG= 10Ω
2
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