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2SK2529

型号：

2SK2529

描述：

硅N沟道MOS FET[ Silicon N Channel MOS FET ]

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

8 页

PDF大小：

89 K

下载PDF手册
2SK2529  
Silicon N Channel MOS FET  
REJ03G1014-0800  
(Previous: ADE-208-356F)  
Rev.8.00  
Sep 07, 2005  
Application  
High speed power switching  
Features  
•
•
•
•
Low on-resistance  
RDS(on) = 7 mΩ typ.  
High speed switching  
4 V gate drive device can be driven from 5 V source  
Outline  
RENESAS Package code: PRSS0003AE-A  
(Package name: TO-220C•FM)  
D
1. Gate  
2. Drain  
3. Source  
G
1
2
3
S
Rev.8.00 Sep 07, 2005 page 1 of 7  
2SK2529  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
Ratings  
Unit  
V
60  
±20  
VGSS  
V
ID  
50  
A
1
Drain peak current  
ID(pulse)  
*
200  
A
Body to drain diode reverse drain current  
Avalanche current  
IDR  
50  
A
3
IAP  
*
45  
A
3
Avalanche energy  
EAR  
*
174  
mJ  
W
°C  
°C  
Channel dissipation  
Pch*2  
35  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg ≥ 50 Ω  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
60  
±20  
—
Typ  
—
Max  
—
Unit  
Test Conditions  
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
V
V
ID = 10 mA, VGS = 0  
IG = ±100 µA, VDS = 0  
VGS = ±16 V, VDS = 0  
VDS = 60 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 25 A, VGS = 10 V*4  
ID = 25 A, VGS = 4 V*4  
ID = 25 A, VDS = 10 V*4  
—
—
—
±10  
10  
2.0  
10  
16  
—
µA  
µA  
V
IDSS  
—
—
VGS(off)  
RDS(on)  
1.0  
—
—
Static drain to source on state  
resistance  
7
mΩ  
mΩ  
S
—
10  
Forward transfer admittance  
Input capacitance  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
35  
—
55  
3550  
1760  
500  
35  
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
—
—
—
—
—
—
ID = 25 A, VGS = 10 V,  
RL = 1.2 Ω  
—
230  
470  
360  
0.85  
135  
—
Turn-off delay time  
Fall time  
td(off)  
tf  
—
—
—
—
Body to drain diode forward voltage  
VDF  
trr  
—
—
IF = 50 A, VGS = 0  
Body to drain diode reverse  
recovery time  
—
—
ns  
IF = 50 A, VGS = 0  
diF / dt = 50 A / µs  
Note: 4. Pulse Test  
Rev.8.00 Sep 07, 2005 page 2 of 7  
2SK2529  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
500  
40  
30  
20  
10  
200  
100  
50  
20  
10  
5
Operation in  
this area is  
limited by R  
DS(on)  
2
1
Ta = 25°C  
0.5  
0
50  
100  
150  
200  
3
30  
0.1 0.3  
1
10  
100  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
10 V  
6 V  
5 V  
4 V  
100  
80  
60  
40  
20  
100  
80  
Pulse Test  
VDS = 10 V  
Pulse Test  
3.5 V  
60  
3 V  
40  
25°C  
Tc = 75°C  
20  
–25°C  
VGS = 2.5 V  
0
0
1
2
3
4
5
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
0.5  
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
0.2  
0.1  
0.05  
0.02  
0.01  
VGS = 4 V  
10 V  
ID = 50 A  
0.005  
0.002  
0.001  
20 A  
10 A  
0.0005  
6
0
2
4
8
10  
1
10  
30  
100 300 1000  
3
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.8.00 Sep 07, 2005 page 3 of 7  
2SK2529  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
500  
0.04  
0.032  
0.024  
0.016  
0.008  
VDS = 10 V  
Pulse Test  
200 Pulse Test  
100  
50  
Tc = –25°C  
I
D = 50 A  
20  
10  
5
25°C  
10, 20 A  
VGS = 4 V  
75°C  
2
1
10, 20, 50 A  
120 160  
10 V  
40  
0
0.5  
0.1 0.3  
–40  
0
80  
1
3
10  
30  
100  
Case Temperature TC (°C)  
Drain Current ID (A)  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
10000  
5000  
5000  
2000  
1000  
500  
Ciss  
2000  
1000  
500  
200  
100  
50  
Coss  
Crss  
20  
10  
5
200  
100  
di / dt = 50 A / µs  
VGS = 0, Ta = 25°C  
VGS = 0  
f = 1 MHz  
0.1 0.3  
1
3
10  
30  
100  
0
10  
20  
30  
40  
50  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
D = 50 A  
Switching Characteristics  
100  
80  
60  
40  
20  
20  
16  
12  
8
5000  
I
2000  
1000  
t
d(off)  
VDD = 10 V  
25 V  
50 V  
500  
t
f
VDS  
200  
100  
50  
t
r
VGS  
t
d(on)  
20  
10  
5
4
0
VDD = 50 V  
25 V  
10 V  
VGS = 10 V, VDS = 30 V  
PW = 5 µs, duty < 1 %  
0
0.1 0.3  
1
3
10  
30  
100  
40  
80  
120  
160  
200  
Gate Charge Qg (nc)  
Drain Current ID (A)  
Rev.8.00 Sep 07, 2005 page 4 of 7  
2SK2529  
Reverse Drain Current vs.  
Source to Drain Voltage  
Maximum Avalanche Energy vs.  
Channel Temperature Derating  
100  
80  
60  
40  
20  
200  
160  
120  
80  
Pulse Test  
IAP = 45 A  
V
DD = 25 V  
duty < 0.1 %  
Rg > 50 Ω  
10 V  
5 V  
VGS = 0, –5 V  
40  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
25  
50  
75  
100  
125  
150  
Channel Temperature Tch (°C)  
Source to Drain Voltage VSD (V)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 3.57°C/W, Tc = 25°C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
Pulse Width PW (S)  
Avalanche Test Circuit and Waveform  
100 m  
1
10  
VDSS  
VDSS – VDD  
1
2
2
• L • IAP •  
EAR  
=
L
VDS  
Monitor  
I
AP  
Monitor  
V(BR)DSS  
IAP  
Rg  
VDS  
VDD  
D. U. T  
ID  
Vin  
15 V  
50 Ω  
VDD  
0
Rev.8.00 Sep 07, 2005 page 5 of 7  
2SK2529  
Switching Time Test Circuit  
Vin Monitor  
Waveform  
Vout  
Monitor  
90%  
D.U.T.  
RL  
10%  
10%  
Vin  
Vout  
10%  
VDD  
= 30 V  
Vin  
10 V  
50 Ω  
90%  
90%  
t
t
t
f
d(off)  
d(on)  
t
r
Rev.8.00 Sep 07, 2005 page 6 of 7  
2SK2529  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
PRSS0003AE-A  
Package Name  
MASS[Typ.]  
1.9g  
Unit: mm  
TO-220CFM / TO-220CFMV  
4.5 0.3  
2.7 0.2  
10.0 0.3  
φ 3.2 0.2  
1.0 0.2  
1.15 0.2  
2.5 0.2  
0.6 0.1  
2.54  
2.54  
0.7 0.1  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK2529-E  
50 pcs  
Plastic magazine  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.8.00 Sep 07, 2005 page 7 of 7  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
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