3VD037060NEJL
STRUCTURE
N-CH MOSFET CHIPS WITH ESD PROTECTED
DESCRIPTION
¾ 3VD037060NEJL is a N-Channel enhancement mode
MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
¾ Zener diode ESD protected up to 500V (HBM).
¾ High density cell design for low RDS (ON).
¾ Rugged and reliable.
¾ Fast switching performance.
¾ High saturation current capability.
¾ The chips may be packaged in SOT-23 type .
¾ The packaged product is widely used in the small
servo motor control, power MOS-FET gate drivers,
and other switching applications.
CHIP TOPOGRAPHY
¾ Die size: 0.37mm*0.37mm.
¾ Chip Thickness: 230±20μm.
¾ Top metal: Al, Backside Metal: Au.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
ID
Ratings
Unit
V
60
±20
V
Drain Current
100
mA
mA
mW
°C
Drain Current --Plused *
Power Dissipation (SOT-23)
Operation Junction Temperature
Storage Temperature
IDM
600
PD
200
TJ
150
Tstg
-55-150
°C
Note:* Repetitive rating: pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
Test conditions
Min.
Typ. Max.
Unit
V
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA
60
-
-
-
2.0
±5
1
Gate-Threshold Voltage*
Gate-body Leakage
Vth(GS)
lGSS
VDS= VGS, ID=250µA
VDS=0V, VGS =±20V
VDS=60V, VGS =0V
VGS=5.0V, ID=100mA
VGS=10V, ID=100mA
1.2
V
-
-
-
-
-
µA
µA
Zero Gate Voltage Drain Current
IDSS
-
4
3
6
Drain-Source On-Resistance *
RDS(on)
Ω
5
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.1
2008.10.15
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