3VD060060NEJL
3VD060060NEJL N•CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
DESCRIPTION
Ø
3VD060060JL is a N•Channel enhancement mode
MOS•FET chip fabricated in advanced silicon epitaxial
planar technology.
Ø
Ø
Ø
Ø
Ø
Ø
Zener diode ESD protected up to 2KV
High density cell design for lowDSR(ON)
Rugged and reliable.
Fast switching performance.
High saturation current capability.
The chips may be packaged in SOT•23 type and the
typical equivalent product is 2N7002K.
The packaged product is widely used in the small servo
motor control, power MOS•FET gate drivers, and other
switching applications.
CHIP TOPOGRAPHY
Ø
Ø
Ø
Ø
Die size: 0.60mm*0.60mm.
Chip Thickness: 230±m2m0.
Top metal : Al, Backside Metal : Au.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source Voltage
Gate•Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
V
60
±20
V
300
mA
mW
°C
Power Dissipation (SOT•23)
Operation Junction Temperature
Storage Temperature
PD
350
TJ
150
•55•150
°C
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
Test conditions
VGS=0V, ID=10µA
Min
60
1
Typ
••
Max
••
Unit
Drain•Source Breakdown Voltage V(BR)DSS
V
••
Gate•Threshold Voltage*
Gate•body Leakage
Vth(GS)
lGSS
VDS= VGS, ID=250µA
VDS=0V, VGS =±20V
VDS=60V, VGS =0V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
2.5
±10
1
••
••
µA
µA
••
••
Zero Gate Voltage Drain Current
IDSS
••
••
2.0
3.0
Drain•Source On•Resistance*
RDS(on)
••
••
Note:* Pulse test, pulse width300µS, duty cycle2%
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.09.03
Page 1 of 1
