3VD045060JL
3VD045060JL N•channel MOSFET CHIPS
DESCRIPTION
Ø
3VD045060JL is a N•Channel enhancement mode
MOS•FET chip fabricated in advanced silicon
epitaxial planar technology.
2
1
Ø
Ø
Ø
Ø
Ø
High density cell design for lowDSR(ON)
Rugged and reliable.
Fast switching performance.
High saturation current capability.
The chips may be packaged in SOT•23 type and the
typical equivalent product is 2N7002.
The packaged product is widely used in the small
servo motor control, power MOS•FET gate drivers,
and other switching applications.
PAD1: GATE
PAD2: SOURCE
Ø
CHIP TOPOGRAPHY
Ø
Ø
Chip Thickness: 230±m2m0.
Top metal : Al, Backside Metal : Au.
Ø
Die size: 0.53mm*0.53mm.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source Voltage
Gate•Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
60
Unit
V
±20
V
115
mA
mW
°C
Power Dissipation (SOT•23)
Operation Junction Temperature
Storage Temperature
PD
200
TJ
150
•55•150
°C
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
Test conditions
VGS=0V, ID=10µA
Min
60
60
1
Typ
Max
Unit
Drain•Source Breakdown Voltage V(BR)DSS
V
VGS =0V, ID=3mA
Gate•Threshold Voltage*
Gate•body Leakage
Vth(GS)
lGSS
VDS= VGS, ID=250µA
VDS=0V, VGS =±20V
VDS=60V, VGS =0V
VGS=10V, VDS=7V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS=10V, ID=200mA
IS=115mA, VGS =0V
2.5
±100
1
nA
µA
mA
Zero Gate Voltage Drain Current
On•state Drain Current*
IDSS
ID(ON)
500
1.2
1.7
7.5
7.5
Drain•Source On•Resistance*
Drain•Source On• Voltage *
RDS(on)
VDS(on)
3.75
0.375
V
Forward Transconductance*
Diode Forward Voltage
gts
80
ms
V
VSDF
1.2
Note:* Pulse test, pulse width300µS, duty cycle2%
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.07.02
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