INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD705
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 45V(Min.)
·Complement to Type BD706
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PARAMETER
VALUE
UNIT
V
Collector-Base Voltage
45
45
Collector-Emitter Voltage VBE= 0
Collector-Emitter Voltage
Emitter-Base Voltage
V
45
V
5
V
Collector Current-Continuous
Base Current-Continuous
12
A
IB
5
A
Collector Power Dissipation
@ TC=25℃
PC
75
W
℃
℃
TJ
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.67
70
UNIT
℃/W
℃/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
