IXGH 30N60 IXGM 30N60
IXGH 30N60A IXGM 30N60A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
8
16
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2800
230
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
150
35
180 nC
50 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
60
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
500
200
2
ns
ns
1 = Gate
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
2 = Collector
3 = Emitter
Tab = Collector
ns
,
30N60A
30N60A
ns
Eoff
mJ
Inductive load, TJ = 125°C
td(on)
tri
100
200
3
ns
ns
IC = IC90, VGE = 15 V,
L = 300 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES
,
600 1000 ns
500 1500 ns
250
RG = Roff = 33 Ω
30N60
30N60A
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • VCES, higher
TJ or increased RG
800 ns
Eoff
30N60
30N60A
5.5
4.0
mJ
mJ
TO-204AE Outline
RthJC
RthCK
0.62 K/W
K/W
0.25
IXGH 30N60 and IXGH 30N60A characteristic curves are located on the
IXGH 30N60U1 and IXGH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
