找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH32N50BS

型号:

IXGH32N50BS

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

54 K

Preliminary Data Sheet  
HiPerFASTTM IGBT  
IXGH32N50B  
IXGH32N50BS  
VCES  
IC25  
= 500 V  
= 60 A  
VCE(sat) = 2.0 V  
tfi  
= 80 ns  
TO-247 SMD  
(32N50BS)  
Symbol  
TestConditions  
Maximum Ratings  
C (TAB)  
G
TO-247 AD  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
500  
500  
V
V
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
60  
32  
A
A
A
TC = 90°C  
TAB)  
TC = 25°C, 1 ms  
120  
C
E
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM = 64  
@ 0.8 VCES  
A
Clamped inductive load, L = 100 µH  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
l
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
High current handling capability  
Newest generation HDMOSTM process  
MOS Gate turn-on  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
6
4
g
g
TO-247 SMD  
l
l
l
- drive simplicity  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
PFC circuits  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
l
l
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
500  
2.5  
V
V
l
5
l
l
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
power supplies  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
l
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.0  
l
Very fast switching speeds for high  
frequency applications  
© 1997 IXYS All rights reserved  
95564A(4/97)  
IXGH32N50B  
IXGH32N50BS  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; VCE = 10 V,  
Pulse test, t 300 µs, duty cycle 2 %  
15  
20  
S
P
Cies  
Coes  
Cres  
2500  
230  
70  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
125  
23  
150 nC  
35 nC  
75 nC  
e
Dim.  
Millimeter  
Inches  
Min. Max.  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Min. Max.  
50  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
25  
30  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V, L = 100 µH,  
CE = 0.8 VCES, RG = Roff = 4.7 Ω  
V
100  
80  
200 ns  
150 ns  
1.5 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
20.80 21.46  
15.75 16.26  
,
Eoff  
0.7  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
25  
35  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.3  
120  
120  
mJ  
ns  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
6.15 BSC  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
,
TO-247 SMD Outline  
Eoff  
1.2  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Min. Recommended Footprint (Dimensions in inches and (mm))  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
1.14  
1.91  
1.40  
2.13  
.045 .055  
.075 .084  
C
D
0.61  
20.80  
0.80  
21.34  
.024 .031  
.819 .840  
E
e
15.75  
5.45  
16.13  
BSC  
.620 .635  
.215 BSC  
L
4.90  
2.70  
2.10  
0.00  
1.90  
5.10  
2.90  
2.30  
0.10  
2.10  
.193 .201  
.106 .114  
.083 .091  
L1  
L2  
L3  
L4  
.00  
.004  
.075 .083  
ØP  
Q
3.55  
5.59  
3.65  
6.20  
.140 .144  
.220 .244  
R
S
4.32  
6.15  
4.83  
BSC  
.170 .190  
.242 BSC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

IXYS

IXGA10N60 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

IXGA10N60A 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.256557s