IXGH32N60B
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
15
20
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2500
230
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
125
23
150 nC
35 nC
75 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
50
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
25
30
ns
ns
Dim. Millimeter
Inches
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Min. Max. Min. Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
100
80
200 ns
150 ns
1.6 mJ
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
,
Eoff
0.8
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
25
35
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
-
4.5
-
0.177
Eon
td(off)
tfi
0.3
120
120
1.4
mJ
ns
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
N
1.5 2.49 0.087 0.102
Eoff
mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data
sheet.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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