请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH39N60B

型号：

IXGH39N60B

描述：

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

155 K

下载PDF手册
HiPerFASTTM IGBT  
IXGH39N60B  
IXGH39N60BD1 IC25  
IXGT39N60B  
IXGT39N60BD1 tfi  
VCES  
= 600 V  
= 76 A  
VCE(sat) = 1.7 V  
= 200 ns  
Preliminarydata  
(D1)  
TO-268  
(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
76  
39  
152  
A
A
A
C (TAB)  
G
C
SSOA  
V
= 15 V, TVJ = 125°C, RG = 22 Ω  
I
= 76  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
200  
E
(RBSOA)  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
JEDEC TO-247 AD & TO-268  
High current handling capability  
Newest generation HDMOSTM process  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
z
z
Md  
Mounting torque (M3)  
TO-247  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
Applications  
z
PFC circuits  
Symbol  
TestConditions  
Characteristic Values  
z
AC motor speed control  
(TJ = 25°C, unless otherwise specified)  
z
DC servo and robot drives  
Min. Typ. Max.  
z
DC choppers  
z
BVCES  
VGE(th)  
ICES  
I
= 250 µA, VGE = 0 V  
39N60B  
600  
600  
V
Uninterruptible power supplies (UPS)  
ICC = 750 µA  
39N60BD1  
z
Switched-mode and resonant-mode  
power supplies  
I
= 250 µA, VCE = VGE  
39N60B  
2.5  
5.0  
5.0  
V
V
ICC = 500 µA  
39N60BD1 2.5  
Advantages  
VCE = 0.8 • VCES TJ = 25°C  
39N60B  
200 µA  
z
High power density  
VGE = 0 V  
TJ = 125°C  
TJ = 125°C  
39N60B  
1
3
mA  
mA  
z
Very fast switching speeds for high  
39N60BD1  
frequency applications  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = I90, VGE = 15 V  
±100 nA  
1.7  
VCE(sat)  
V
DS97548A(02/03)  
© 2003 IXYS All rights reserved  
IXGH39N60B  
IXGT39N60B  
IXGH39N60BD1 IXGT39N60BD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; V = 10 V,  
19  
28  
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %  
P
Cies  
2750  
pF  
Coes  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
39N60B  
200  
240  
pF  
pF  
39N60BD1  
Cres  
50  
pF  
e
QG  
QGE  
QGC  
110  
25  
40  
150 nC  
35 nC  
75 nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
25  
30  
250  
200  
4.0  
ns  
ns  
500 ns  
360 ns  
6.0 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Remarks: Switching times may  
increase for V (Clamp) > 0.8 • VCES  
higher TJ or inCcEreased RG  
20.80 21.46  
15.75 16.26  
,
,
Eoff  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
Eon  
td(off)  
tfi  
25  
30  
0.3  
360  
350  
6.0  
ns  
ns  
mJ  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
CE = 0.8 VCES, RG = Roff = 4.7 Ω  
Remarks: Switching times may  
increase for V (Clamp) > 0.8 • VCES  
higher TJ or inCcEreased RG  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
V
Eoff  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
I
= I , V = 0 V, Pulse test  
T =150°C  
TJJ = 25°C  
1.6  
2.5  
V
V
tF≤ 30C090µs,GdEuty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, V = 0 V, -diF/dt = 100 A/µs  
IFR = 1 A; -di/dt = 100 A/µs; VR = 30 V TJJ = 25°C  
6
A
ns  
ns  
V = 100 VGE  
T = 100°C 100  
25  
RthJC  
0.9 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH39N60B  
IXGT39N60B  
IXGH39N60BD1 IXGT39N60BD1  
Fig. 1. Saturation Voltage  
Characteristics @ 25 Deg. C  
Fig. 2. Extended Output  
Characteristics @ 25 Deg. C  
160  
40  
35  
30  
25  
20  
15  
10  
5
VGE=15V  
13V  
11V  
9V  
9V  
VGE=15V  
13V  
140  
120  
100  
80  
11V  
7V  
5V  
60  
7V  
5V  
40  
20  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
0
1
2
3
4
5
VCE - Volts  
V
CE - Volts  
Fig. 3. Saturation Voltage  
Fig. 4. Temperature Dependence of  
VCE(SAT)  
1.45  
Characteristics @ 125 Deg. C  
100  
80  
60  
40  
20  
0
VGE=15V  
9V  
IC=78A  
13V  
11V  
1.3  
1.15  
1
7V  
5V  
IC=39A  
0.85  
0.7  
IC=19.5A  
0 25 50 75 100 125 150  
-50 -25  
0
1
2
3
4
5
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. BVCES & V(GE)TH vs. Junction  
Temperature  
Fig. 6. Admittance  
100  
80  
60  
40  
20  
0
1.2  
1.1  
1
VGE(TH)  
BVCES  
°
TJ= 125 C  
25  
-40  
0.9  
0.8  
0.7  
°
C
°
C
4
5
6
7
8
9
-50 -25  
0
25 50 75 100 125 150  
VGE - Volts  
TJ - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXGH39N60B  
IXGT39N60B  
IXGH39N60BD1 IXGT39N60BD1  
Fig. 7. Transconductance  
Fig. 8. Dependence of EOFF on IC  
16  
50  
40  
30  
20  
10  
0
TJ = -40 C  
º
TJ = 125ºC  
VGE = 15V  
14  
12  
10  
8
RG = 56 Ohms  
25ºC  
125ºC  
VCE = 480V  
RG = 5 Ohms  
6
4
2
0
20  
40  
60  
80  
100  
120  
10  
30  
50  
70  
90  
IC - Amperes  
IC - Amperes  
Fig. 10. Dependence of EOFF on  
Temperature  
Fig. 9. Dependence of EOFF on RG  
18  
16  
14  
12  
10  
8
Solid lines - RG = 5 Ohms  
Dashed lines - RG = 56 Ohms  
VGE = 15V  
15  
12  
9
IC =  
78A  
IC = 78A  
V
CE = 480V  
TJ = 125ºC  
VGE = 15V  
V
CE = 480V  
IC =  
39A  
6
6
IC = 39A  
4
IC =  
19.5A  
3
2
IC = 19.5A  
0
0
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
RG - Ohms  
TJ - Degrees Centigrades  
Fig. 12. Transient Thermal Response  
Fig. 11. Gate Charge  
15  
12  
9
1
VCE=300V  
IC=20A  
IG=10mA  
0.1  
6
3
0
0.01  
0
20  
40  
60  
80  
100  
120  
1
10  
100  
1000  
QG - nanocoulombs  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH39N60B  
IXGT39N60B  
IXGH39N60BD1 IXGT39N60BD1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 12 Forward current IF versus VF  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
2.0  
90  
20  
V
1.00  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
VR = 300V  
µs  
ns  
VFR  
VFR  
tfr  
trr  
1.5  
Kf  
15  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2003 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.198042s