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IXGK80N60A

型号:

IXGK80N60A

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

45 K

Preliminary data  
VCES  
IC25  
= 600 V  
80 A  
IXGK80N60A  
HiPerFASTTM IGBT  
=
VCE(sat) = 2.7 V  
tfi  
= 275 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-264 AA  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C, limited by leads  
TC = 90°C  
80  
80  
A
A
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
TC = 25°C, 1 ms  
200  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 100  
A
(RBSOA)  
Clamped inductive load, L = 30 µH  
@ 0.8 VCES  
PC  
TC = 25°C  
500  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• International standard package  
JEDEC TO-264 AA  
-55 ... +150  
• Two mached dice connected in parallel  
• Low VCE(sat)  
Md  
Mounting torque (M4)  
0.9/6 Nm/lb.in.  
Weight  
10  
g
- for minimum on-state conduction  
losses  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10s  
300  
°C  
• MOS Gate turn-on  
- drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 500 µA, VGE = 0 V  
IC = 500 µA, VCE = VGE  
600  
2.5  
V
5
V
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
400  
2
µA  
mA  
• Easy to mount with 1 screw  
(isolated mounting screw hole)  
• Reduces assembly time and cost  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90, VGE = 15 V  
2.7  
©1997 IXYS Corporation. All rights reserved.  
96524A (5/97)  
IXGK80N60A  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-264 AA Outline  
min. typ.  
max.  
IC = 40A; VCE = 10 V,  
30  
50  
S
Pulse test, t 300 µs, duty cycle 2 %  
Qg  
400  
70  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
160  
Cies  
Coes  
Cres  
8000  
860  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
200  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
50  
210  
300  
350  
ns  
ns  
ns  
ns  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = Roff = 2.7 Ω  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
500  
Eoff  
10 12.5 mJ  
td(on)  
tri  
50  
240  
3
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 2.7 Ω  
Eon  
td(off)  
tfi  
mJ  
ns  
400  
600  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
Eoff  
15  
mJ  
RthJC  
RthCK  
0.25 K/W  
K/W  
0.15  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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