VCES = 600 V
IC25 = 75 A
VCE(sat) = 1.7 V
IXGH 60N60
IXGK 60N60
IXGT 60N60
Ultra-Low VCE(sat) IGBT
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
G
C
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
TO-268
(IXGT)
IC25
IC90
ICM
TC = 25°C, limited by leads
TC = 90°C
75
60
A
A
A
E
TC = 25°C, 1 ms
200
(TAB)
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 mH
ICM = 100
@ 0.8 VCES
A
TO-264 (IXGK)
PC
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
G
D
S
D (TAB)
-55 ... +150
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
Weight
TO-247
TO-264
TO-268
6
10
4
g
g
g
• Internationalstandardpackage
JEDEC TO-247 AD, TO-264, TO-268
• New generation HDMOSTM process
• Low VCE(sat) for minimum on-state
conduction losses
• Highcurrenthandlingcapability
• MOS Gate turn-on drive simplicity
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
V
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 mA
mA
Advantages
1
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Low losses, high efficiency
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
1.7
VCE(sat)
IC = IC90, VGE = 15 V
V
• High power, surface mount package
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92796L(7/00)
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