IXGA12N100U1
IXGA12N100AU1
IXGP12N100U1
IXGP12N100AU1
Symbol
TestConditions
CharacteristicValues
Min. Typ. Max.
TO-220 AB (IXGP) Outline
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
6
10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Qg
65
8
90
20
45
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
24
td(on)
tri
td(off)
tfi
100
200
ns
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
850 1000
500 700
800 1000
12N100A
12N100
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
,
Dim.
Millimeter
Inches
Eoff
12N100A
4
6
Min. Max.
Min. Max.
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
td(on)
tri
100
200
1.1
ns
ns
Inductive load, TJ = 125°C
C
D
9.91 10.66 0.390 0.420
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
3.54
4.08 0.139 0.161
Eon
td(off)
tfi
mJ
ns
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
900
950
1250
8
12N100A
12N100
12N100A
12N100
ns
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
,
ns
J
K
0.64
1.01 0.025 0.040
Eoff
mJ
mJ
2.54 BSC 0.100 BSC
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
10
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
RthJC
RthCK
1.25 K/W
K/W
0.25
TO-263 AA (IXGA) Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
VF
IF =8A, VGE = 0 V,
2.75
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V, TJ = 125°C
6.5
140
50
A
ns
ns
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C
60
RthJC
2.5 K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160 .190
.080 .110
b
b2
0.51
1.14
0.99
1.40
.020 .039
.045 .055
Min. Recommended Footprint
c
c2
0.46
1.14
0.74
1.40
.018 .029
.045 .055
D
D1
8.64
7.11
9.65
8.13
.340 .380
.280 .320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380 .405
.270 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575 .625
.090 .110
.040 .055
.050 .070
L1
L2
L3
L4
0
.015
R
0.46
0.74
.018 .029
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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