WTPB12A60BW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=12A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=17A
■ High Commutation dV/dt.
■
Halogen free(WTPB12A60BW-HF)
General Description
General purpose swithhing and phase control applications.
These devices are intended to be interfaced directly to
micro-controllers, logic integrated circuits and other low power
gate trigger circuits such as fan speed and temperature
modulation control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
VDRM/VPRM
IT(RMS)
Parameter
Value
600
Units
Peak Repetitive Forward Blocking Voltage(gate open)
(Note 1)
V
Forward Current RMS (All Conduction Angles, TJ=58℃)
12
A
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
120/126
A
A2s
W
I2t
100
5
PGM
Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
PG(AV)
1
W
Critical rate of rise of on-state current
TJ=125℃
dI/dt
50
A/μs
ITM = 20A; IG = 200mA; dIG/dt = 200mA/μs
IFGM
VRGM
TJ,
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
Junction Temperature
4
A
V
10
-40~125
-40~150
℃
℃
Tstg
Storage Temperature
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
Max
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
-
-
1.4
℃/W
℃/W
-
-
60
Rev. A Apr.2011
T03-3
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
