WTPA12A60SW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
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Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(IT(RMS)=12A)
Low On-State Voltage (1.55V(Max.)@ITM
High Commutation dv/dt
Halogen free(WTPA12A60SW-HF)
General Description
General purpose switching and phase control applications .These devices
are intented to be interfaced directly to miro-Controllers,logic integrated
circuits and other low power gatetrigger circuits such as fan speed and
temperature modulation control,lighting control and static switching relay.
By using an internal ceramic pad, the WTPA series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
Ratings Units
VDRM VPRM
IT(RMS)
ITSM
/
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
Forward Current RMS(All Conduction Angles, TJ=58℃)
Peak Forward Surge Current, (full Cycle, Sine Wave,50/60Hz)
Circuit Fusing Considerations (tp=10ms)
600
V
12
A
120/126
100
5
A
I2t
A2s
W
W
PGM
PG(AV)
Peak Gate Power —Forward,(TJ=58℃,Pulse With≤1.0us)
Average Gate Power —Forward,(Over any 20ms period)
Critical rate of rise of on-state current
1.0
dI/dt
TJ=125℃
50
A/µs
ITM=20A;IG=200mA;dIG/dt=200mA/µs
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
Junction Temperature
IFGM
VRGM
TJ
4
A
V
10
-40~125
-40~150
℃
℃
Tstg
Storage Temperature
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC
may swiTJh to the on-state .the rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
RӨJC
Parameter
Value
2.3
Units
℃/W
℃/W
Thermal Resistance Junction to case
RӨJA
Thermal resistance Junction to Ambient
60
Rev.A May.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
