WTP772
PNP Epitaxial Planar Transistors
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
TO-251
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
PNP/WTP772
Unit
V
V
V
A
V
-30
-40
-5.0
-3.0
CEO
V
V
CBO
EBO
I
C(DC)
Collector Current (Pulse)1
(Pulse)
(Pulse)
A
-7.0
I
C
I
A
Base Current
-0.6
B
Total Device Dissipation Tc=25°C
10
1.4
P
W
D
T =25°C
A
T
150
Junction Temperature
Storage, Temperature
j
C
C
Tstg
-55 to +150
Device Marking
WTP772 = 772
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = -10mA , I =0)
V
-30
V
C
B
(BR)CEO
-
V
V
-40
Collector-Base Breakdown Voltage (I = -100 µA , I =0)
V
V
C
E
(BR)CBO
-
Emitter-Base Breakdown Voltage (I = -100µA , I =0)
(BR)EBO
-5.0
E
C
µA
µA
-
-
-1.0
-1.0
I
Collector Cutoff Current (V = -30 V , I =0)
CBO
CB
E
I
Emitter Cutoff Current (V = -3.0 V, I =0)
EBO
EB
C
NOTE : 1.P W 380us, duty cycle 2%
WEITRON
http://www.weitron.com.tw
1/5
12-Mar-08
