WSP30D100
Silicon Controlled Rectifiers
Features
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30A(2×15A),100V
VF(max)=0.72V(@TJ=125℃)
Low power loss,high efficiency
Common cathode structure
Guard ring for over voltage protection, High reliability
Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency
switch power supply and Free wheeling diodes, polarity protection
applications.
Absolute Maximum Ratings
Symbol
VDRM
Parameter
Value
100
Units
Repetitive Peak reverse Voltage
V
V
VDC
Maximum DC blocking Voltage
Average forward current
100
Per diode
15
IF(AV)
A
Per device
30
IFSM
TJ
Surge non repetitive for ward current
Junction Temperature
275
A
175
°C
°C
TSTG
Storage Temperature
-40~150
Thermal Characteristics
Value
Typ
-
Symbol
Parameter
Units
Min
Max
RQJC
Thermal Resistance Junction to Case
-
1.8
℃/W
Ordering Information
Order codes
Package
TO220C
Marking
P30D100
P30D100
Halogen Free
Packaging
Tube
WSP30D100
NO
NO
WSP30D100-HW
TO220HW
Tube
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
