WSP20D65
Power Schottky Rectifier
Features
■ 20A(1×10A),65V
■ VF(max)=0.68V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection applications.
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDRM
VDC
Repetitive peak reverse voltage
65
65
V
V
A
Maximum DC blocking voltage
RMS forward current
IF(RMS)
30
per diode
10
IF(AV)
Average forward current
A
per device
20
IFSM
PARM
IRRM
dv/dt
TJ,
Surge non repetitive forward current
Repetitive peak avalanche power
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
150
5800
1
A
W
A
10000
175
-40~150
V/ns
℃
℃
Tstg
Storage Temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
-
Typ
Max
1.9
-
℃/W
℃/W
RQJC
RQCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
-
0.1
-
Rev. C Nov.2008
T01-3
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
