WSP10D100H
Power Schottky Rectifier
Features
■ 10A(2×5A),100V
■ VF(max)=0.60V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
K
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection
applications.
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDRM
VDC
Repetitive peak reverse voltage
100
100
10
V
V
A
Maximum DC blocking voltage
RMS forward current
IF(RMS)
per diode
8
IF(AV)
Average forward current
A
per device
10
IFSM
IRRM
dv/dt
TJ,
Surge non repetitive forward current
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
180
1
A
A
10000
175
-40~150
V/ns
℃
Tstg
Storage Temperature
℃
Thermal Characteristics
Symbol
Value
Parameter
Units
Min
-
Typ
Max
1.9
-
RQJC
RQCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
-
℃/W
℃/W
0.3
-
Rev. B Jun.2011
T02-2
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
