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NX6511GH

型号:

NX6511GH

描述:

激光二极管1 550纳米的InGaAsP MQW - DFB激光二极管1.25 Gb / s的FTTH P2P和OC- 48 IR- 2[ LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2 ]

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

7 页

PDF大小:

200 K

Preliminary Data Sheet  
NX6511GH  
LASER DIODE  
R08DS0052EJ0100  
Rev.1.00  
1 550 nm InGaAsP MQW-DFB LASER DIODE  
FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2  
Jan 19, 2012  
DESCRIPTION  
The NX6511GH is a 1 550 nm Multiple Quantum Well (MQW) structured  
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.  
APPLICATIONS  
1.25 Gb/s FTTH P2P  
OC-48 IR-2  
FEATURES  
Optical output power  
Low threshold current  
Differential efficiency  
Wide operating temperature range  
InGaAs monitor PIN-PD  
CAN package  
PO = 5.0 mW  
Ith = 10 mA  
ηd = 0.35 W/A  
TC = 40 to +85°C  
φ 5.6 mm  
10 mm  
Focal point  
R08DS0052EJ0100 Rev.1.00  
Jan 19, 2012  
Page 1 of 5  
NX6511GH  
Chapter Title  
PACKAGE DIMENSIONS (UNIT: mm)  
(
φ
5.ꢀ)*2  
4.3)*2  
(
φ
(
φ
3.75)*2  
1.0 0.1  
BOTTOM VIEW  
1
4
2
(0.3)*2  
3
Focal Point*1  
Δ
Δ
x = 200 μꢁ ꢂAꢃ.  
y = 200 ꢁ ꢂAꢃ.  
μ
PIN CONNECTIONS  
1 (CASE)  
LD  
4
2
PD  
3
φ
4– 0.45  
φ
2.0  
P.C.D  
*1 Focal Point: A point to get ꢁaxiꢁuꢁ optical output power froꢁ fiber.  
*2 ( ) indicates noꢁinal diꢁension.  
R08DS0052EJ0100 Rev.1.00  
Jan 19, 2012  
Page 2 of 5  
NX6511GH  
Chapter Title  
ORDERING INFORMATION  
Part Number  
Package  
4-pin CAN with aspherical lens cap  
Pin Connections  
1
NX6511GH  
LD  
4
2
PD  
3
Remarks 1. The color of lens cap might be observed differently.  
2. The hermetic test will be performed as AQL 1.0%.  
R08DS0052EJ0100 Rev.1.00  
Jan 19, 2012  
Page 3 of 5  
NX6511GH  
Chapter Title  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
Parameter  
Optical Output Power  
Symbol  
PO  
Ratings  
10  
Unit  
mW  
mA  
V
Forward Current of LD  
IF  
150  
Reverse Voltage of LD  
VR  
2.0  
Forward Current of PD  
IF  
10.0  
mA  
V
Reverse Voltage of PD  
Operating Case Temperature  
Storage Temperature  
VR  
15  
TC  
40 to +85  
40 to +85  
350 (3 sec.)  
85  
°C  
°C  
°C  
%
Tstg  
Tsld  
RH  
Lead Soldering Temperature  
Relative Humidity (noncondensing)  
ELECTRO-OPTICAL CHARACTERISTICS  
(TC = 25°C, CW, BOL, unless otherwise specified)  
Parameter  
Optical Output Power  
Operating Voltage  
Threshold Current  
Symbol  
Conditions  
MIN.  
TYP.  
5.0  
1.1  
10  
MAX.  
Unit  
mW  
V
PO  
1.6  
20  
Vop  
PO = 5.0 mW, TC = 40 to 85°C  
Ith  
mA  
TC = 40 to 85°C  
50  
Differential Efficiency  
ηd  
PO = 5.0 mW  
0.20  
0.10  
1 530  
30  
80  
0.35  
W/A  
W/A  
nm  
dB  
PO = 5.0 mW, TC = 40 to 85°C  
PO = 5.0 mW, TC = 40 to 85°C  
PO = 5.0 mW, TC = 40 to 85°C  
Ib = Ith, 20-80% PO = 5.0 mW  
Ib = Ith, 80-20% PO = 5.0 mW  
VR = 1.5 V, PO = 5.0 mW  
VR = 5 V, TC = 40 to 85°C  
VR = 5 V  
Peak Emission Wavelength  
Side Mode Suppression Ratio  
Rise Time  
λp  
SMSR  
1 570  
tr  
tf  
100  
100  
150  
150  
1 200  
100  
20  
ps  
Fall Time  
ps  
Monitor Current  
Im  
ID  
Ct  
μA  
nA  
Monitor Dark Current  
Monitor PD Terminal  
Capacitance  
Tracking Error *1  
pF  
γ
TC = 40 to 85°C , Im = const.  
(@ PO = 5.0 mW, TC = 25°C)  
1.0  
1.0  
dB  
Note: 1. Tracking Error: γ  
PO  
PO  
5.0  
γ = 10 log  
[dB]  
(ꢁW)  
TC = 25°C  
5.0  
PO  
TC = –40 to +85°C  
Iꢁ  
0
Iꢁ  
(ꢁA)  
R08DS0052EJ0100 Rev.1.00  
Jan 19, 2012  
Page 4 of 5  
NX6511GH  
Chapter Title  
SAFETY INFORMATION ON THIS PRODUCT  
SEMICONDUCTOR LASER  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
AVOID EXPOSURE-Invisible  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
Laser Radiation is emitted from  
this aperture  
CLASS lllb LASER PRODUCT  
A laser beaꢁ is eꢁitted froꢁ this diode during operation.  
The laser beaꢁ, visible or invisible, directly or indirectly, ꢁay cause injury to the eye or loss of  
eyesight.  
Warning Laser Beaꢁ  
• Do not look directly into the laser beaꢁ.  
• Avoid exposure to the laser beaꢁ, any reflected or colliꢁated beaꢁ.  
This product uses galliuꢁ arsenide (GaAs).  
GaAs vapor and powder are hazardous to huꢁan health if inhaled or ingested, so please observe  
the following points.  
Caution GaAs Products  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recoꢁꢁended below.  
1. Coꢁꢁission a disposal coꢁpany able to (with a license to) collect, transport and dispose of  
ꢁaterials that contain arsenic and other such industrial waste ꢁaterials.  
2. Exclude the product froꢁ general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or cheꢁically dissolve the product.  
• Do not lick the product or in any way allow it to enter the ꢁouth.  
R08DS0052EJ0100 Rev.1.00  
Jan 19, 2012  
Page 5 of 5  
Revision History  
NX6511GH Data Sheet  
Description  
Summary  
Rev.  
1.00  
Date  
Page  
Jan 19, 2012  
First edition issued  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  
Notice  
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas  
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to  
be disclosed by Renesas Electronics such as that disclosed through our website.  
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technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or  
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http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
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© 2012 Renesas Electronics Corporation. All rights reserved.  
Colophon 1.1  
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