SMD Type
MOSFICET
MOS Field Effect Power Transistor
2SK2133
TO-263
Unit: mm
4.57+0.2
Features
-0.2
1.27+0.1
-0.1
Low on-resistance
RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A
Low Ciss Ciss=1090 pF TYP.
High avalanche capabil
1.27+0.1
0.1max
-0.1
0.81+0.1
-0.1
2.54
1 Gate
2.54+0.2
5.08+0.1
0.4+0.2
-0.2
-0.2
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
250
Gate to source voltage
V
30
A
16
64
Drain current
Idp *
A
1.5
W
W
Power dissipation TA=25
TC=25
PD
75
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
IDSS
IGSS
VGS(off) VDS=10V,ID=1mA
VDS=10V,ID=8.0A
Testconditons
Min
Typ
Max
100
10
Unit
A
VDS=250V,VGS=0
VGS= 30V,VDS=0
A
2.0
4.0
4.0
V
S
Yfs
RDS(on) VGS=10V,ID=8.0A
Ciss
0.2
1090
420
80
0.26
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
td(on)
tr
20
Rise time
40
ID=8.0A,VGS(on)=10V,RL=18.75
,RG=10 ,VDD=150V
Turn-off delay time
td(off)
tf
60
Fall time
20
1
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