SMD Type
MOSFICET
MOS Field Effect Transistor
2SK2415
Features
Low On-Resistance
TO-252
Unit: mm
RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0A)
RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)
Low Ciss Ciss = 570 pF TYP.
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
Gate to source voltage
V
20
A
8.0
32
Drain current
Idp *
PD
A
Power dissipation
20
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off) VDS=10V,ID=1mA
Testconditons
Min
Typ
Max
10
Unit
A
Drain cut-off current
VDS=60V,VGS=0
Gate leakage current
VGS= 20V,VDS=0
10
A
Gate to source cutoff voltage
Forward transfer admittance
1.0
5.0
1.6
8.4
2.0
V
VDS=10V,ID=4A
VGS=10V,ID=4A
VGS=4V,ID=4A
S
Yfs
0.07 0.10
Drain to source on-state resistance
RDS(on)
0.10 0.15
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
570
290
75
5
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
60
75
40
ID=4A,VGS(on)=10V,RG=10 ,VDD=30V
Turn-off delay time
Fall time
toff
tf
1
www.kexin.com.cn
