请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK2628FS

型号：

2SK2628FS

描述：

N沟道MOSFET硅通用开关设备的应用[ N-Channel Silicon MOSFET General-Purpose Switching Device Applications ]

品牌：

SANYO[ SANYO SEMICON DEVICE ]

页数：

5 页

PDF大小：

267 K

下载PDF手册
Ordering number : ENA1323  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK2628FS  
Features  
•
Low ON-reisitance.  
•
Low Qg.  
•
Ultrahigh-speed switching.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
600  
±30  
7
DSS  
V
V
GSS  
*1  
I
Limited only by maximum temperature  
A
Dc  
Drain Current (DC)  
I
*2  
Tc=25 C (SANYO’s ideal heat dissipation condition)*3  
6.2  
24  
A
°
Dpack  
Drain Current (Pulse)  
Allowable Power Dissipation  
I
PW 10 s, duty cycle 1%  
A
≤
μ
≤
DP  
2.0  
35  
W
W
P
D
Tc=25 C (SANYO s ideal heat dissipation condition)*3  
°
’
Channel Temperature  
Tch  
150  
C
C
°
°
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *4  
Avalanche Current *5  
E
98  
6
mJ  
A
AS  
I
AV  
Note : 1 Shows chip capability  
*
2 Package limited  
*
3 SANYO’s condition is radiation from backside.  
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  
4 V =50V, L=5mH, I =6A  
*
DD  
AV  
5 L 5mH, Single pulse  
*
≤
Marking : K2628  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1323-1/5  
O2208QB MS IM TC-00001661  
2SK2628FS  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
600  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=10mA, V =0V  
V
mA  
nA  
V
(BR)DSS  
D GS  
I
V
=480V, V =0V  
1.0  
DSS  
DS GS  
I
V
=±30V, V =0V  
±100  
5.5  
GSS  
(off)  
GS DS  
V
V
=10V, I =1mA  
3.5  
2.0  
GS  
| yfs |  
(on)  
DS  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
V
=10V, I =4A  
D
4.0  
S
DS  
R
I
=2A, V =15V  
0.9  
1050  
320  
180  
23  
1.1  
Ω
DS  
D GS  
Ciss  
Coss  
Crss  
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
V
DS  
Output Capacitance  
V
DS  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
V
DS  
t
t
t
t
(on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
d
r
Rise Time  
35  
Turn-OFF Delay Time  
(off)  
90  
d
f
Fall Time  
35  
Total Gate Charge  
Qg  
V
=200V, V =10V, I =6A  
GS  
30  
DS  
D
Diode Forward Voltage  
V
I =6A, V =0V  
S GS  
0.85  
1.2  
SD  
Package Dimensions  
unit : mm (typ)  
7528-001  
4.7  
10.16  
3.18  
2.54  
2.76  
1.47 MAX  
0.8  
1
2
3
0.5  
1 : Gate  
2 : Drain  
3 : Source  
2.54  
2.54  
SANYO : TO-220F-3FS  
Switching Time Test Circuit  
Avalanche Resistance Test Circuit  
V =200V  
DD  
L
I
=4A  
D
R =50Ω  
≥50Ω  
RG  
L
V
OUT  
V
GS  
=15V  
D
PW=1μs  
D.C.≤0.5%  
2SK2628FS  
15V  
0V  
G
V
DD  
50Ω  
R
S
GS  
50Ω  
P. G  
2SK2628FS  
No. A1323-2/5  
2SK2628FS  
I
D
-- V  
DS  
I
-- V  
D GS  
10  
9
12  
10  
8
V
=10V  
DS  
8
7
6
5
6
4
4
3
7V  
2
2
0
1
0
V
=6V  
GS  
0
2
4
6
8
10  
12  
16  
18 20  
IT03675  
0
2
4
6
8
10  
12  
14  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V  
-- V  
IT03674  
GS  
R
(on) -- V  
R
(on) -- Tc  
DS  
GS  
DS  
1.4  
1.3  
1.2  
1.1  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
Tc=25°C  
I
=6A  
D
4A  
2A  
0.9  
0.8  
0.5  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Case Temperature, Tc -- °C  
Gate-to-Source Voltage, V  
-- V  
IT03676  
IT03677  
GS  
| yfs | -- I  
I
-- V  
D
S SD  
10  
7
3
2
V
=0V  
V
=10V  
GS  
DS  
10  
7
5
5
3
2
3
2
1.0  
7
5
3
2
1.0  
7
0.1  
7
5
5
3
2
3
2
0.01  
7
5
3
2
0.001  
0.1  
2
3
5
7
2
3
5
7
2
0
0.3  
0.6  
0.9  
1.2  
1.5  
IT03679  
0.1  
1.0  
10  
Drain Current, I -- A  
IT03678  
Diode Forward Voltage, V  
-- V  
D
SD  
V
GS  
-- Qg  
Ciss, Coss, Crss -- V  
DS  
3
10  
8
f=1MHz  
V
=200V  
DS  
=6A  
2
I
D
1000  
7
5
6
3
2
4
2
0
100  
7
5
0
5
10  
15  
20  
25  
30  
IT03680  
0
5
10  
15  
20  
25  
30  
IT03681  
Drain-to-Source Voltage, V  
DS  
-- V  
Total Gate Charge, Qg -- nC  
No. A1323-3/5  
2SK2628FS  
SW Time -- I  
A S O  
D
1000  
5
V
=200V  
I
=24A  
PW≤10μs  
DD  
DP  
3
2
7
5
10  
I
I
=7A  
=6.2A  
DC  
7
5
3
2
Dpack  
3
2
1.0  
7
5
100  
7
5
3
2
Operation in this area  
is limited by R (on).  
DS  
0.1  
7
5
3
2
3
2
t (on)  
d
Tc=25°C  
Single pulse  
0.01  
0.1  
10  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
1000  
IT14036  
2
3
5
7
2
3
5
7
2
3
1.0  
10  
1.0  
10  
100  
Drain-to-Source Voltage, V  
DS  
-- V  
Drain Current, I -- A  
IT03682  
D
P
-- Ta  
P
-- Tc  
D
D
2.5  
2.0  
1.5  
1.0  
40  
35  
30  
25  
20  
15  
10  
0.5  
0
5
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT03684  
Case Temperature, Tc -- °C  
IT03685  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Ambient Temperature, Ta -- °C  
No. A1323-4/5  
2SK2628FS  
Note on usage : Since the 2SK2628FS is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of October, 2008. Specifications and information herein are subject  
to change without notice.  
PS No. A1323-5/5  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.205683s