2SK2687-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
Outline Drawings
TO-220AB
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Rating
30
Unit
V
Remarks
Drain(D)
Continuous drain current
Pulsed drain current
ID
±50
±200
±16
520
60
A
ID[puls]
VGS
EAV
PD
A
Gate(G)
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
V
*1
mJ
W
°C
°C
Tch
+150
-55 to +150
Source(S)
Tstg
*1 L=0.277mH, Vcc=12V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
IDSS
ID=1mA
ID=1mA
VDS=30V
VGS=0V
VDS=VGS
VGS=0V
V
30
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
1.0
1.5
10
0.2
2.0
500
1.0
100
V
Tch=25°C
µA
mA
nA
Tch=125°C
±16V
10
12
VGS=
VDS=0V
Gate-source leakage current
IGSS
17
10
ID=25A
VGS=10V
VGS=4V
mΩ
mΩ
S
Drain-source on-state resistance
RDS(on)
7.5
VGS=10V
22
45
2750
1300
600
13
ID=25A
VDS=25V
Forward transconductance
Input capacitance
gfs
4130
1950
900
20
Ciss
Coss
Crss
td(on)
tr
VDS=25V
VGS=0V
f=1MHz
VCC=15V RG=10 Ω
ID=50A
Output capacitance
Reverse transfer capacitance
Turn-on time
pF
ns
55
83
VGS=10V
180
150
270
230
Turn-off time
td(off)
tf
L=100µH
Tch=25°C
A
50
Avalanche capability
IAV
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=2xIDR VGS=0V Tch=25°C
IF=2xIDR VGS=0V
1.14
85
0.17
1.71
130
VSD
trr
ns
µC
-di/dt=100A/µs Tch=25°C
Qrr
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max. Units
2.08
°C/W
Thermal resistance
75.0
°C/W
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