2SK2691-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
Outline Drawings
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
TO-3PF
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
Rating
60
Unit
V
Remarks
Drain(D)
Continuous drain current
Pulsed drain current
ID
±70
±280
±20
A
ID[puls]
VGS
EAV
PD
A
Gate(G)
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
V
685
*1
mJ
W
°C
°C
100
Tch
+150
-55 to +150
Source(S)
Tstg
*1 L=0.186mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
IDSS
ID=1mA
ID=1mA
VDS=60V
VGS=0V
VDS=VGS
VGS=0V
V
60
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
1.0
1.5
10
0.2
2.0
500
1.0
100
V
Tch=25°C
µA
mA
nA
Tch=125°C
20V
10
12
VGS=
VDS=0V
Gate-source leakage current
IGSS
17
10
ID=40A
VGS=10V
VGS=4V
mΩ
mΩ
S
Drain-source on-state resistance
RDS(on)
7.5
VGS=10V
25
55
3500
1250
360
15
ID=40A
VDS=25V
Forward transconductance
Input capacitance
gfs
5250
1870
540
23
Ciss
Coss
Crss
td(on)
tr
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=10 Ω
ID=75A
Output capacitance
Reverse transfer capacitance
Turn-on time
pF
ns
75
120
285
165
VGS=10V
190
110
Turn-off time
td(off)
tf
L=100µH
Tch=25°C
A
70
Avalanche capability
IAV
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=160A VGS=0V Tch=25°C
IF=80A
1.15
75
0.17
1.65
120
VSD
trr
ns
µC
-di/dt=100A/µs Tch=25°C
Qrr
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max. Units
1.25
°C/W
Thermal resistance
30.0
°C/W
www.fujielectric.co.jp/fdt/scd
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