SMD Type
MOSFET
MOS Field Effect Transistor
2SK2857
SOT-89
Unit: mm
+0.1
-0.1
+0.1
1.50
-0.1
4.50
1.80
Features
+0.1
-0.1
Can be driven by a 5V power source.
Low On-state resistance :
RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A)
RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A)
3
0.53
2
1
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
1 Gate
1. Source
1. Base
+0.1
-0.1
3.00
2 Drain
2. Drain
2. Collector
3 Source
3. Emiitter
3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
Gate to source voltage
V
20
A
4
Drain current
Idp *
PD
A
16
2
Power dissipation
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off) VDS=10V,ID=1mA
Testconditons
Min
Typ
Max
10
Unit
A
Drain cut-off current
VDS=60V,VGS=0
Gate leakage current
VGS= 20V,VDS=0
10
A
Gate to source cutoff voltage
Forward transfer admittance
1.0
1
11.4
2.0
V
VDS=10V,ID=2A
VGS=4V,ID=1.5A
VGS=10V,ID=2.5A
S
Yfs
150
110
265
125
56
220
150
m
Drain to source on-state resistance
RDS(on)
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
8
11
ID=1A,VGS(on)=10V,RL=25 ,RG=10
,VDD=25V
Turn-off delay time
Fall time
toff
tf
52
22
Marking
Marking
NX
1
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