SMD Type
MOSFET
N-Channel Silicon MOSFET
2SK2859
Features
Low On resistance.
Ultrahigh-speed switching.
4V drive.
1 : No Contact
2 : Source
3 : No Contact
4 : Gate
5-8 : Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
100
Gate to source voltage
V
15
2
A
Drain current
Idp *
PD
8
1.6
A
Power dissipation
W
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
100
Typ
Max
Unit
V
Drain to source breakdown voltage
Drain cut-off current
VDSS
IDSS
IGSS
ID=1mA,VGS=0
VDS=100V,VGS=0
VGS= 12V,VDS=0
100
10
A
Gate leakage current
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=10V,ID=1mA
1.0
2.5
2.0
V
VDS=10V,ID=2A
VGS=10V,ID=2A
VGS=4V,ID=2A
4
0.3
0.4
380
80
15
10
13
70
30
1
S
Yfs
0.4
Drain to source on-state resistance
RDS(on)
0.55
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
pF
pF
pF
ns
ns
ns
ns
V
VDS=20V,VGS=0,f=1MHZ
tr
ID=2A,VGS(on)=10V,RL=25 ,VDD=50V
IS=2A,VGS=0
Turn-off delay time
Fall time
toff
tf
Diode forward voltage
VSD
1.2
1
www.kexin.com.cn
