2SK2896-01L,S
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
Features
T-pack(S)
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
T-pack(L)
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Item
Drain-source voltage
Symbol
VDS
Rating
60
Unit
V
Remarks
Continuous drain current
Pulsed drain current
ID
±45
±180
A
Gate(G)
ID[puls]
VGS
EAV
PD
A
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
±20
V
461.9
60
mJ
W
°C
°C
*1
Source(S)
Tch
+150
Tstg
-55 to +150
*1 L=0.304mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
IDSS
ID=1mA
ID=1mA
VDS=60V
VGS=0V
VDS=VGS
VGS=0V
V
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
60
1.0
V
1.5
10
0.2
2.0
500
1.0
100
Tch=25°C
µA
mA
nA
mΩ
Tch=125°C
±20V
VGS=
VDS=0V
10
15
Gate-source leakage current
IGSS
VGS=4V
20
12
ID=22.5A VGS=10V
Drain-source on-state resistance
RDS(on)
VGS=10V
10
S
15
35
Forward transconductance
Input capacitance
gfs
ID=22.5A
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=10 Ω
ID=45A
VDS=25V
2900
930
260
13
4350
1400
390
30
Ciss
Coss
Crss
td(on)
tr
Output capacitance
Reverse transfer capacitance
Turn-on time
pF
35
50
VGS=10V
ns
190
75
290
140
Turn-off time
td(off)
tf
µ
L=100 H
Tch=25°C
A
Avalanche capability
45
IAV
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=45A VGS=0V Tch=25°C
IF=45A VGS=0V
VSD
trr
0.95
55
0.10
1.43
ns
µC
-di/dt=100A/µs Tch=25°C
Qrr
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max. Units
2.08
°C/W
Thermal resistance
125.0
°C/W
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