2SK3018
N-Channel Enhancement Mode MOSFET
• Features
• External dimensions
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this
device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
③
②
③
①
①
②
• Applications
Interfacing, switching (30V, 100mA)
Units:mm
• Structure
Silicon N-channel
MOSFET
SOT-323
SOT-23
①. Gate ②. Source ③. Drain
• Absolute maximum ratings (Ta = 25°C)
• Equivalent circuit
Drain
Parameter
Drain-source voltage
Limits
30
Unit
Symbol
VDSS
VGSS
ID
V
V
Gate-source voltage
20
Continuous
Pulsed
100
mA
mA
mA
mA
mW
°C
Drain current
200
IDP*1
IDR
Gate
Continuous
Pulsed
100
Reverse
current
drain
200
IDRP*1
PD*2
Tch
Total power dissipation(Tc=25°C)
200
*Gate
Protection
Diode
Channel temperature
150
Source
Storage temperature
Tstg
-55~+150
°C
*1Pw≤10µs,Duty Cycle≤50%
*2With each pin mounted on the recommended lands
*A protection diode is included between the
gate and the source terminals to protect the
diode against static electricity when the product
is in use. Use a protection circuit when the fixed
voltages are exceeded.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
