SMD Type
Junction FET
N-Channel Junction Silicon FET
2SK303
SOT-23
Unit: mm
Features
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Ideal for potentiometers, analog switches, low
frequency amplifiers, constant current supplies, and
impedance conversion.
3
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1Source
1.Base
1. Gate
2 Drain
2.Emitter
2. Source
3 Gate
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to Drain voltage
Gate current
Symbol
VDSS
VGDS
IG
Rating
Unit
V
30
-30
V
10
m A
m A
mW
Drain current
ID
20
Power dissipation
PD
200
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Gate to drain
Symbol
Testconditons
Min
-30
Typ
Max
Unit
V
VGDS
IG=-10
A
Gate to source leakage current
Drain cut-off current
IGSS
IDSS
VGS(off)
VGS=-20V
-1.0
12.0
-4
nA
mA
V
VDS=10V,VGS=0
VDS=10V,ID=1
0.6
2.5
Cutoff voltage
-1
6.0
250
5
A
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
VDS=10V,VGS=0,f=1MHz
VGS=0,VDS=10mV
ms
Yfs
RDS(on)
Ciss
pF
pF
VDS=10V,VGS=0,f=1MHZ
Reverse transfer capacitance
Crss
1.5
IDSS Classification unit:mA
Marking
Rank
V2
2
V3
3
V4
V5
5
4
IDSS
0.6 1.5
1.2 3.0
2.5 6.0
5.0 12.0
1
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