FUJI POWER MOSFET200303
2SK3474-01
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item
Symbol
VDS
Ratings
150
Unit
V
Remarks
Equivalent circuit schematic
Drain-source voltage
(4) Drain(D)
VGS=30V
V
VDSX
ID
120
±33
A
Continuous drain current
Ta=25°C
A
±4.1 *4
(1) Gate(G)
A
Pulsed drain current
ID(puls]
VGS
IAR
±132
±30
33
V
Gate-source voltage
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
*2
(3) Source(S)
mJ
EAS *1
dVDS/dt
dV/dt *3
PD
169
20
(2) Source(S)
[power line]
<
[signal line]
VDS 150V
=
kV/µs
kV/µs
W
5
Ta=25°C
2.4 *4
150
+150
-55 to +150
W
Operating and storage
temperature range
Tch
°C
Tstg
°C
<
<
<
<
*1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C
=
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
Electrical characteristics atTc =25°C ( unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
µ
ID=250 A
VGS=0V
VDS=VGS
V
Drain-source breakdown voltaget
Gate threshold voltage
150
3.0
µ
ID= 250 A
V
5.0
Tch=25°C
µA
25
VDS=150V VGS=0V
VDS=120V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
VDS=0V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
10
54
100
ID=11.5A VGS=10V
mΩ
S
70
ID=11.5A VDS=25V
VDS=75V
8
16
Ciss
Coss
Crss
td(on)
tr
pF
1500
200
17
1730
300
26
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=48V ID=11.5A
VGS=10V
13
20
15
23
td(off)
tf
34
51
Turn-off time toff
RGS=10 Ω
15
23
VCC=48V
ID=23A
QG
nC
34
51
Total Gate Charge
QGS
QGD
IAV
9
13.5
19
Gate-Source Charge
Gate-Drain Charge
VGS=10V
12.5
µ
L=228 H Tch=25°C
33
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
1.10
1.60
V
trr
Qrr
0.13
0.6
µs
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.833 °C/W
Thermal resistance
Rth(ch-a)
Rth(ch-a)
channel to ambient
channel to ambient
87.0
52.0
°C/W
°C/W
*4
1
