SMD Type
MOSFICET
MOS Field Effect Transistor
2SK3484
TO-252
Unit: mm
Features
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Super low on-state resistance:
RDS(on)1 = 125m MAX. (VGS = 10 V, ID = 8A)
RDS(on)2 = 148m MAX. (VGS = 4.5 V, ID = 8A)
Low Ciss: Ciss = 900 pF TYP.
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
100
Gate to source voltage
V
20
A
16
Drain current
Idp *
A
22
30
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=100V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=8A
VGS=10V,ID=8A
VGS=4.5V,ID=8A
10
A
1.5
4.5
2.0
9.5
100
110
900
110
50
2.5
V
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
125
148
m
Drain to source on-state resistance
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Coss
Crss
ton
9.0
5.0
30
tr
ID=8A,VGS(on)=10V,RG=0 ,VDD=50V
Turn-off delay time
Fall time
toff
tf
4.0
20
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
ID =16A, VDD =80V, VGS = 10 V
QGS
QGD
3.0
5.0
1
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