2SK3597-01
200304
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
Foot Print Pattern
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
Ratings
200
Unit
Equivalent circuit schematic
V
VDSX *5
ID Tc=25
Ta=25
ID(puls]
170
±45
V
°C
°C
D : Drain
Continuous drain current
A
±4.3 **
A
A
Pulsed drain current
Gate-source voltage
±180
±30
45
G : Gate
VGS
V
Non-repetitive Avalanche current IAS *2
A
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
EAS *1
dVDS/dt *4
dV/dt *3
PD Tc=25
Ta=25
Tch
258.9
20
mJ
S1 : Source
kV/µs
S2 : Source
5
kV/µs
W
°C
°C
270
2.4 **
Operating and storage
temperature range
+150
-55 to +150
°C
°C
Tstg
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C
<
*2 Tch 150°C
=
*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
<
<
<
<
*4 VDS 200V *5 VGS=-30V
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
VDS=VGS
V
200
Drain-source breakdown voltaget
Gate threshold voltage
µ
ID= 250 A
V
3.0
5.0
25
Tch=25°C
µA
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
66
IGSS
RDS(on)
gfs
nA
10
50
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=15A VGS=10V
mΩ
S
12.5
25
ID=15A VDS=25V
VDS=75V
Ciss
1960
260
18
2940
390
27
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=48V ID=15A
VGS=10V
20
30
17
26
53
80
td(off)
tf
Turn-off time toff
RGS=10 Ω
19
29
51
76.5
QG
VCC=100V
ID=30A
nC
Total Gate Charge
15
22.5
24
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
16
VGS=10V
45
µ
L=205 H Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.10
1.65
VSD
trr
Qrr
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs
V
0.19
1.4
µs
µC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Rth(ch-c)
Test Conditions
channel to case
0.463
87.0
52.0
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
channel to ambient
°C/W
Rth(ch-a) **
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
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