2SK3601-01
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
Foot Print Pattern
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
100
Unit
Equivalent circuit schematic
V
Drain-source voltage
VDS
V
VDSX *5
ID Tc=25
Ta=25
ID(puls]
70
D : Drain
°C
°C
A
A
Continuous drain current
±29
±4.4 **
A
Pulsed drain current
Gate-source voltage
±116
±30
29
G : Gate
V
A
VGS
Non-repetitive Avalanche current IAS *2
mJ
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
EAS *1
dVDS/dt *4
dV/dt *3
PD Tc=25
Ta=25
Tch
155.8
20
S1 : Source
S2 : Source
kV/µs
kV/µs
W
5
°C
°C
105
2.4 **
Operating and storage
temperature range
+150
°C
°C
Tstg
-55 to +150
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
<
*1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph
*2 Tch =150°C
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C *4 VDS 100V *5 VGS=-30V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
µ
ID= 250 A
VGS=0V
V
100
Drain-source breakdown voltaget
Gate threshold voltage
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
VDS=100V VGS=0V
VDS=80V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
62
VDS=0V
IGSS
RDS(on)
gfs
VGS=±30V
nA
10
47
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=10A VGS=10V
mΩ
S
6
12
ID=10A VDS=25V
VDS=75V
Ciss
730
190
12
1095
285
18
pF
VGS=0V
Coss
Crss
td(on)
tr
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=48V ID=10A
12
18
3.8
23
8.5
6
VGS=10V
35
td(off)
tf
Turn-off time toff
RGS=10 Ω
13
22
9
33
VCC=50V
ID=20A
QG
nC
Total Gate Charge
13.5
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
6
9
VGS=10V
µ
29
L=222 H Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.10
65
0.17
1.65
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
trr
Qrr
V
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
1.191
87.0
52.0
°C/W
°C/W
Rth(ch-c)
channel to case
Thermal resistance
Rth(ch-a)
channel to ambient
channel to ambient
Rth(ch-a) **
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
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