2SK3609-01
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
Foot Print Pattern
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
200
Unit
Equivalent circuit schematic
V
Drain-source voltage
VDS
V
VDSX *5
170
±18
°C
°C
A
Continuous drain current
ID Tc=25
D : Drain
A
A
Ta=25
±2.7 **
Pulsed drain current
Gate-source voltage
ID(puls]
VGS
±72
±30
18
G : Gate
V
A
Non-repetitive Avalanche current IAS *2
mJ
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
EAS *1
dVDS/dt *4
dV/dt *3
PD Tc=25
Ta=25
Tch
125.5
20
S1 : Source
kV/µs
S2 : Source
kV/µs
5
°C
°C
105
W
2.4 **
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
<
*1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C *4 VDS 200V
*5 VGS=-30V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
V
200
Drain-source breakdown voltaget
Gate threshold voltage
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
VDS=200V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
170
VDS=160V VGS=0V
VGS=±30V VDS=0V
IGSS
RDS(on)
gfs
nA
10
131
11
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=6.5A VGS=10V
mΩ
S
5.5
ID=6.5A VDS=25V
VDS=75V
Ciss
770
110
5
1155
165
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
7.5
18
3.9
33
9.2
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=48V ID=6.5A
VGS=10V
12
2.6
22
6.1
td(off)
tf
Turn-off time toff
RGS=10 Ω
21
8
31.5
12
QG
VCC=100V
ID=13A
nC
Total Gate Charge
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
5
7.5
VGS=10V
µ
18
L=620 H Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.10
1.65
VSD
trr
Qrr
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs
V
0.15
0.88
µs
µC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
1.191 °C/W
Symbol
Rth(ch-c)
Test Conditions
channel to case
channel to ambient
channel to ambient
Thermal resistance
Rth(ch-a)
°C/W
°C/W
87.0
52.0
Rth(ch-a) **
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
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