SMD Type
TransistIoCrs
KDD3670
Electrical Characteristics Ta = 25
Parameter
Symbol
WDSS
IAR
Testconditons
VDD = 50 V, ID = 7.3A (Not 2)
( Not 2)
Min
100
Typ
Max
360
7.3
Unit
mJ
A
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
BVDSS
V
VGS = 0 V, ID = 250
A
Breakdown Voltage Temperature Coefficient
92
ID = 250 A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 80 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
1
100
-100
4
A
nA
nA
V
2
2.5
VDS = VGS, ID = 250
A
Gate Threshold Voltage Temperature
Coefficient
-7.2
ID = 250 A, Referenced to 25
mV/
m
VGS = 10 V, ID = 7.3 A
VGS = 10 V, ID = 7.3 A,TJ = 125
VGS = 6 V, ID =7 A,
22
39
24
32
56
35
Static Drain-Source On-Resistance
RDS(on)
On-State Drain Current
Forward Transconductance
Input Capacitance
ID(on)
gFS
Ciss
Coss
Crss
td(on)
tr
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 7.3 A
25
15
A
31
2490
265
80
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 50 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
16
26
18
84
40
80
10
VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN
= 6
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
56
25
Total Gate Charge
Qg
57
VDS = 50 V, ID = 7.3 A,VGS = 10 V
(Note 2)
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
11
15
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.7
1.2
A
V
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 2.7 A (Not 2)
0.72
2
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