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2SK3640

型号：

2SK3640

描述：

MOS场效应[ MOS Field Effect Transistor ]

品牌：

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数：

2 页

PDF大小：

63 K

下载PDF手册

SMD Type

TransistIoCrs

100V N-Channel PowerTrench MOSFET

KDD3670

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Features

34 A, 100 V. RDS(ON) = 32m @ VGS = 10 V

R^DS(ON)= 35m @ VGS = 6 V

Low gate charge (57 nC typical)

Fast switching speed

0.127

max

+0.1

0.80

-0.1

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

100

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1)

Drain Current Pulsed

I^D

100

Power dissipation @ T^C=25

Power dissipation @ T^a=25

Power dissipation @ Ta=25

(Note 1)

3.8

(Note 1a)

(Note 1b)

1.6

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

T^J, TSTG

-55 to 175

1.8

www.kexin.com.cn

SMD Type

TransistIoCrs

KDD3670

Electrical Characteristics Ta = 25

Parameter

Symbol

W^DSS

I^AR

Testconditons

VDD = 50 V, ID = 7.3A (Not 2)

( Not 2)

Min

100

Typ

Max

360

7.3

Unit

Single Pulse Drain-Source Avalanche Energy

Maximum Drain-Source Avalanche Current

Drain-Source Breakdown Voltage

B^VDSS

VGS = 0 V, ID = 250

Breakdown Voltage Temperature Coefficient

I^D= 250 A, Referenced to 25

mV/

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

Gate Threshold Voltage

IDSS

I^GSSF

I^GSSR

V^GS(th)

VDS = 80 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

100

-100

2.5

VDS = VGS, ID = 250

Gate Threshold Voltage Temperature

Coefficient

-7.2

I^D= 250 A, Referenced to 25

mV/

VGS = 10 V, ID = 7.3 A

V^GS= 10 V, ID = 7.3 A,TJ = 125

V^GS= 6 V, ID =7 A,

Static Drain-Source On-Resistance

RDS(on)

On-State Drain Current

Forward Transconductance

Input Capacitance

I^D(on)

g^FS

C^iss

C^oss

C^rss

t^d(on)

VGS = 10 V, VDS = 5 V

VDS = 5 V, ID = 7.3 A

2490

265

VDS = 50 V, VGS = 0 V,f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

V^DD= 30 V, ID = 1 A,VGS = 10 V, RGEN

= 6

Turn-Off Delay Time

Turn-Off Fall Time

t^d(off)

t^f

Total Gate Charge

Q^g

V^DS= 50 V, ID = 7.3 A,VGS = 10 V

(Note 2)

Gate-Source Charge

Gate-Drain Charge

Q^gs

Q^gd

Maximum Continuous Drain-Source Diode

Forward Current

I^S

2.7

1.2

Drain-Source Diode Forward Voltage

V^SD

VGS = 0 V, IS = 2.7 A (Not 2)

0.72

www.kexin.com.cn

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