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2SK3703_06

型号:

2SK3703_06

描述:

通用开关设备的应用[ General-Purpose Switching Device Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

5 页

PDF大小:

53 K

Ordering number : EN7681A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3703  
Features  
Low ON-resistance.  
4V drive.  
Ultrahigh-speed switching.  
Motor drive, DC / DC converter.  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
30  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
120  
2.0  
25  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
135  
30  
AS  
I
AV  
Note : *1 V =20V, L=200µH, I =30A  
DD  
AV  
*2 L200µH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=1mA, V =0V  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
60  
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=60V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0V  
DS  
±10  
V (off)  
GS  
=10V, I =1mA  
1.2  
13  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =15A  
22  
S
D
R
(on)1  
I
=15A, V =10V  
GS  
20  
28  
26  
40  
mΩ  
mΩ  
DS  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
D
=15A, V =4V  
GS  
Marking : K3703  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
72506QA MS IM TC-00000067 / 61504 TS IM TA-100813 No.7681-1/5  
2SK3703  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Ciss  
Coss  
Crss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
1780  
266  
197  
16.5  
110  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
166  
144  
40  
t
f
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
V
V
=30V, V =10V, I =30A  
GS  
DS  
DS  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
=30V, V =10V, I =30A  
GS  
6.5  
D
=30V, V =10V, I =30A  
GS  
11.5  
1.0  
D
V
SD  
I
=30A, V =0V  
1.2  
S GS  
Package Dimensions  
unit : mm (typ)  
Switching Time Test Circuit  
7508-003  
V
=30V  
DD  
V
IN  
4.5  
10.0  
10V  
0V  
2.8  
3.2  
I
=15A  
D
V
IN  
R =2  
L
D
V
OUT  
PW=10µs  
D.C.1%  
G
1.6  
1.2  
2SK3703  
P. G  
50Ω  
S
0.75  
0.7  
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : TO-220ML  
Avalanche Resistance Test Circuit  
L
50Ω  
2SK3703  
10V  
0V  
V
50Ω  
DD  
No.7681-2/5  
2SK3703  
I
-- V  
I
-- V  
D
DS  
D
GS  
50  
45  
40  
35  
30  
25  
20  
15  
10  
50  
45  
40  
35  
30  
25  
20  
15  
10  
Tc=25°C  
V
=10V  
DS  
V
=3V  
GS  
5
0
5
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
Drain-to-Source Voltage, V  
-- V  
IT05386  
Gate-to-Source Voltage, V  
-- V  
GS  
IT05387  
DS  
R
DS  
(on) -- V  
R
DS  
(on) -- Tc  
GS  
60  
50  
40  
30  
20  
70  
60  
50  
40  
30  
20  
I =15A  
D
25°C  
--25  
°C  
10  
0
10  
0
2
3
4
5
6
7
8
9
10  
IT05388  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
Case Temperature, Tc -- °C  
IT05389  
GS  
yfs -- I  
I
-- V  
SD  
D
S
100  
5
3
2
V
=0V  
GS  
7
5
10  
7
5
3
2
3
2
1.0  
7
5
10  
3
2
7
5
0.1  
7
5
3
2
3
2
0.01  
7
5
1.0  
3
2
7
5
0.001  
2
3
5
7
2
3
5
7
2
3
5
0
0.3  
0.6  
0.9  
1.2  
0.1  
1.0  
10  
Drain Current, I -- A  
IT05390  
Diode Forward Voltage, V  
-- V  
SD  
IT05391  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
5
5
V
=30V  
=10V  
f=1MHz  
DD  
V
GS  
3
2
3
2
Ciss  
t
f
1000  
100  
7
5
7
5
3
2
3
2
t (on)  
d
100  
10  
0.1  
7
2
3
5
7
2
3
5
7
2
3
5
0
5
10  
15  
20  
25  
30  
IT05393  
1.0  
10  
Drain Current, I -- A  
IT05392  
Drain-to-Source Voltage, V  
-- V  
D
DS  
No.7681-3/5  
2SK3703  
V
-- Qg  
A S O  
GS  
10  
9
3
2
V
=30V  
DS  
<10µs  
I =120A  
DP  
I =30A  
D
100  
7
5
8
I =30A  
D
3
2
7
6
10  
7
5
5
Operatuon in this  
area is limited by R (on).  
3
2
4
DS  
3
1.0  
7
5
2
3
2
1
0
Tc=25°C  
Single pulse  
0.1  
0.1  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
2
3
5
7
2
3
5
7
2
3
5 7  
1.0  
10  
Total Gate Charge, Qg -- nC  
IT05394  
Drain-to-Source Voltage, V  
-- V  
IT05395  
DS  
P
-- Ta  
P
-- Tc  
D
D
2.5  
2.0  
1.5  
1.0  
35  
30  
25  
20  
15  
10  
0.5  
0
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT05397  
Case Temperature, Tc -- °C  
IT05396  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Ambient Temperature, Ta -- °C  
No.7681-4/5  
2SK3703  
Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of July, 2006. Specifications and information herein are subject  
to change without notice.  
PS No.7681-5/5  
厂商 型号 描述 页数 下载

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ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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