2SK3728-01MR
200305
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
VDSX
ID
Ratings
900
900
±2.2
±8.8
±30
Unit
V
V
*5
Equivalent circuit schematic
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
V
Gate-source voltage
Drain(D)
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
2.2
127.2
40
mJ
EAS
kV/µs
dVDS/dt *4
dV/dt
*3
5
kV/µs
W
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
2.16
Source(S)
26
Operating and storage
temperature range
Isolation Voltage
+150
-55 to +150
°C
Tstg
°C
VISO
*6
2000
Vrms
<
*1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*4 VDS 900V *5 VGS=-30V *6 f=60Hz, t=6-sec.
=
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
Drain-source breakdown voltaget
Gate threshold voltage
µ
900
V
ID= 250 A
VGS=0V
µ
3.0
5.0
25
V
ID= 250 A
VDS=VGS
µA
VDS=900V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=720V VGS=0V
VGS=±30V
VDS=0V
ID=1.1A VGS=10V
ID=1.1A VDS=25V
VDS=25V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
6.15
2.2
250
36
2.2
8.00
Ω
1.1
S
Ciss
375
55
pF
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
3.3
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=1.1A
ns
17
6
26
9
VGS=10V
26
28
39
td(off)
tf
Turn-off time toff
RGS=10 Ω
42
8.3
12.5
5.1
3.3
QG
nC
Total Gate Charge
VCC=450V
3.4
2.2
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
ID=2.2A
VGS=10V
2.2
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=48.2mH Tch=25°C
0.90
0.8
1.50
VSD
trr
Qrr
V
IF=2.2A VGS=0V Tch=25°C
IF=2.2A VGS=0V
-di/dt=100A/µs
µs
µC
2.2
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
4.808
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
