2SK3769-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
TO-220F
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
150
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
VDSX
ID
120
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
23
A
ID(puls]
VGS
IAR
±92
A
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
23
A
Note *1
Note *2
Source(S)
EAS
301.1
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=10A,L=4.42mH,
EAR
3.7
mJ
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
PD
20
5
kV/µs
<
VDS 150V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
37
Tc=25°C
Ta=25°C
W
2.16
+150
Operating and Storage
Temperature range
Isolation Voltage
Tch
°C
°C
Tstg
VISO
-55 to +150
2
t=60sec. f=60Hz
kVrms
<
<
<
Note *4:IF -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
µ
ID= 250 A
VGS=0V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
150
3.0
µ
ID= 250 A
VDS=VGS
V
5.0
25
Tch=25°C
µA
µA
nA
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V
VDS=0V
Zero Gate Voltage Drain Current
IDSS
Tch=125°C
250
100
100
IGSS
RDS(on)
gfs
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
ID=11.5A VGS=10V
77
12
740
145
10
13
4
mΩ
S
6
ID=11.5A VDS=25V
VDS=75V
Ciss
Coss
Crss
td(on)
tr
1100
220
15
19
6
pF
VGS=0V
Output Capacitance
f=1MH
Reverse Transfer Capacitance
Turn-On Time ton
ns
VCC=48V
ID=11.5A
VGS=10V
20
7
30
11
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
23
10
6
35
15
9
VCC=75V
QG
nC
Total Gate Charge
ID=23A
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
VGS=10V
1.00
125
0.7
1.50
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
3.378 °C/W
Thermal resistance
°C/W
58
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