2SK3891-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
Ratings
700
Unit
V
Remarks
VDS
VDSX
ID
700
V
VGS=-30V
Equivalent circuit schematic
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
17
A
ID(puls]
VGS
±68
A
Drain(D)
±30
V
Note *1
Maximum Avalanche current
Repetitive
IAS
17
A
Gate(G)
Maximum Avalanche current
Non-Repetitive
IAR
8.5
A
Source(S)
EAS
989
mJ
Note *2
Note *3
Maximum Avalanche Energy
Repetitive
<
Note *1:Tch 150°C
=
EAR
17.0
mJ
Note *2:StartingTch=25°C,IAS=6.8A,L=37.7mH,
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
VCC=100V,RG=50Ω
dVDS/dt
dV/dt
PD
40
5
<
kV/µs
VDS 700V
=
EAS limited by maximum channel temperature
and Avalanche current.
kV/µs Note *4
170
3.13
+150
Tc=25°C
Ta=25°C
W
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Operating and Storage
Temperature range
Isolation Voltage
Tch
°C
Tstg
VISO
-55 to +150
2
°C
kVrms
t=60sec f=60Hz
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
Test Conditions
Min. Typ.
700
3.0
Max. Units
Item
µ
V
ID= 250 A
VGS=0V
VDS=VGS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
µ
V
ID= 250 A
5.0
25
µA
Tch=25°C
VDS=700V VGS=0V
Zero Gate Voltage Drain Current
IDSS
250
100
Tch=125°C
VDS=560V VGS=0V
VGS=±30V VDS=0V
ID=8.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Ω
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
0.47
12
0.60
6.0
ID=8.5A VDS=25V
VDS=25V
S
Ciss
Coss
Crss
td(on)
tr
1750
250
13
2625
375
pF
VGS=0V
Output Capacitance
19.5
f=1MHz
Reverse Transfer Capacitance
Turn-On Time ton
ns
20
30
24
90
30
69
21
26
VCC=600V ID=8.5A
VGS=10V
16
60
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
20
46
QG
VCC=350V
ID=17A
nC
Total Gate Charge
14
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
17
VGS=10V
1.10
1.50
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
4
trr
Qrr
µs
µC
25
-di/dt=100A/µs
Tch=25°C
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
°C/W
0.735
Thermal resistance
°C/W
40.0
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