2SK3913-01MR FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Features
Outline Drawings [mm]
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
TO-220F
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
250
220
14
Unit
V
Remarks
Drain-source voltage
VGS=-30V
V
A
A
V
A
VDSX
ID
Continuous drain current
Pulsed drain current
ID(puls]
VGS
±56
±30
14
Gate-source voltage
Note *1
Note *2
Note *3
Repetitive or non-repetitive
IAR
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Peak diode recovery -di/dt
Max. power dissipation
mJ
EAS
301.1
Equivalent circuit schematic
3.7
20
mJ
<
dVDS/dt
dV/dt
-di/dt
PD
VDS 250V
kV/μs
kV/μs
A/μs
W
=
5
Drain(D)
Note *4
Note *5
100
2.16
°C
Ta=25
°C
Tc=25
37
+150
W
Operating and storage
temperature range
Tch
°C
Gate(G)
-55 to +150
2
Tstg
°C
Source(S)
t=60sec, f=60Hz
Isolation voltage
<
VISO *6
kVrms
Note *1 Tch 150°C
=
Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=100A/μs, Vcc BVDSS, Tch 150°C
Note *5 IF -ID, -di/dt=100A/μs, Vcc BVDSS, Tch 150°C
=
=
<
<
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
μ
Drain-source breakdown voltage
Gate threshold voltage
250
3.0
V
ID= 250 A
VGS=0V
VDS=VGS
μ
V
5.0
25
2.0
100
ID= 250 A
μA
mA
nA
Tch=25°C
VDS=250V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VDS=200V VGS=0V
VGS=±30V
VDS=0V
ID=7A VGS=10V
IGSS
RDS(on)
gfs
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
220
10
780
90
6
280
mΩ
S
5
ID=7A VDS=25V
Ciss
Coss
Crss
td(on)
tr
1170
135
9
pF
VDS=75V
VGS=0V
Output capacitance
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=48V ID=7A
ns
12
3
18
4.5
VGS=10V
23
6
35
9
td(off)
tf
Turn-off time toff
RGS=10 Ω
22
7
33
11
9
QG
nC
Total Gate Charge
VCC=125V
ID=14A
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
6
VGS=10V
1.00
120
0.5
1.50
250
1.25
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/μs
trr
Qrr
ns
μC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
3.378
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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