2SK3915-01MR FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
TO-220F
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
450
450
6
Unit
V
Remarks
Drain-source voltage
V
A
A
V
A
VGS=-30V
VDSX
ID
Continuous drain current
Pulsed drain current
ID(puls]
VGS
±24
±30
6
Gate-source voltage
Note *1
Note *2
Repetitive or non-repetitive
IAR
Non-repetitive
Maximum avalanche energy
Equivalent circuit schematic
mJ
EAS
320
Repetitive
Maximum avalanche energy
3.2
20
mJ
Note *3
<
Drain(D)
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
dVDS/dt
dV/dt
PD
kV/μs
kV/μs
W
VDS 450V
=
5
Note *4
2.16
°C
°C
Ta=25
Tc=25
32
+150
W
Gate(G)
Operating and storage
temperature range
Isolation voltage
Tch
°C
Tstg
-55 to +150
2
°C
Source(S)
VISO *6
kVrms t=60sec, f=60Hz
<
Note *1 Tch 150°C
=
Note *2 Starting Tch=25°C, IAS=6A, L=102mH, VCC=45V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
μ
Drain-source breakdown voltage
Gate threshold voltage
ID= 250 A
VGS=0V
VDS=VGS
V
450
3.0
μ
V
ID= 250 A
5.0
25
2.0
100
1.20
μA
mA
nA
Tch=25°C
VDS=450V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VDS=360V VGS=0V
VGS=±30V
VDS=0V
ID=3A VGS=10V
IGSS
RDS(on)
gfs
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
0.98
5
Ω
S
2.5
ID=3A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
pF
440
67
2.8
12
6.5
25
5.5
660
100
4.5
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=3A
ns
18
10
38
VGS=10V
td(off)
tf
Turn-off time toff
RGS=10 Ω
8.5
15.5
6.8
23.5
10.5
5.5
QG
nC
Total Gate Charge
VCC=225V
ID=6A
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
3.7
VGS=10V
1.00
300
2.0
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/μs
trr
Qrr
ns
μC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
3.906
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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