2SK3916-01
Super FAP-G Series
Features
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
450
Unit
V
Remarks
Drain-source voltage
V
A
A
V
A
VGS=-30V
VDSX
ID
450
Continuous drain current
Pulsed drain current
4.3
ID(puls]
VGS
±17.2
±30
Gate-source voltage
Repetitive or non-repetitive
IAR
4.3
Note *1
Note *2
Note *3
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
mJ
EAS
211
Equivalent circuit schematic
6
mJ
<
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
dVDS/dt
dV/dt
PD
20
VDS 450V
=
kV/μs
kV/μs
W
Drain(D)
5
Note *4
2.02
°C
°C
Ta=25
60
W
Tc=25
Operating and storage
temperature range
Tch
+150
°C
Tstg
-55 to +150
°C
Gate(G)
<
Note *1 Tch 150°C
=
Source(S)
Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
μ
Drain-source breakdown voltage
Gate threshold voltage
ID= 250 A
VGS=0V
450
V
μ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
2.0
100
1.60
μA
mA
nA
Tch=25°C
VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
IGSS
RDS(on)
gfs
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=2.1A VGS=10V
1.30
3.5
330
Ω
1.8
S
ID=2.1A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
500
pF
50
2
75
Output capacitance
VGS=0V
4
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=2.1A
ns
11
17.5
8.5
34.5
8.0
20
5.5
23
5.0
VGS=10V
td(off)
tf
Turn-off time toff
RGS=10 Ω
13.0
6.0
QG
nC
Total Gate Charge
VCC=225V
ID=4.3A
9.0
3.8
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
2.5
VGS=10V
1.00
280
1.6
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=4.3A VGS=0V Tch=25°C
IF=4.3A VGS=0V
trr
Qrr
ns
μC
-di/dt=100A/μs
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
2.083
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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