2SK3922-01
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Outline Drawings [mm]
TFP
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
120
Unit
V
Remarks
Drain-source voltage
V
A
A
A
V
A
VGS=-30V
VDSX
ID
90
Foot Print Pattern
Continuous drain current
±67
Ta=25°C Note *1
±6.3
±268
±30
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
ID(puls]
VGS
IAR
Note *2
Note *3
Note *4
67
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Equivalent circuit schematic
mJ
EAS
719.1
27.0
20
Drain(D)
mJ
<
dVDS/dt
dV/dt
PD
VDS 120V
kV/μs
kV/μs
W
=
5
Note *5
2.02
°C Note*1
°C
Ta=25
270
W
Tc=25
Gate(G)
Operating and storage
temperature range
Tch
+150
°C
Source(S)
Tstg
-55 to +150
°C
Note *1 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area:500mm2)
<
Note *2 Tch 150°C
=
Note *3 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *4 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
Note *5 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
<
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Symbol
V(BR)DSS
VGS(th)
Item
μ
ID= 250 A
VGS=0V
Drain-source breakdown voltage
Gate threshold voltage
V
120
μ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
μA
VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=33.5A VGS=10V
24.6
30.0
mΩ
S
ID=33.5A VDS=25V
VDS=75V
14
28
1880
360
30
Ciss
2820
540
45
pF
VGS=0V
Coss
Crss
td(on)
tr
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=48V ID=33.5A
20
30
35
53
VGS=10V
td(off)
tf
50
75
Turn-off time toff
RGS=10 Ω
23
35
VCC=60V
ID=67A
52
78
QG
nC
Total Gate Charge
16
24
QGS
QGD
VSD
trr
Gate-Source Charge
Gate-Drain Charge
18
27
VGS=10V
1.10
150
0.9
1.50
IF=67A VGS=0V Tch=25°C
IF=67A VGS=0V
-di/dt=100A/μs
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
ns
μC
Qrr
Tch=25°C
Thermalcharacteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max. Units
Rth(ch-c)
channel to case
0.463
87.0
52.0
°C/W
°C/W
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
channel to ambient
Rth(ch-a) *1
1
http://www.fujielectric.co.jp/fdt/scd/
