2SK3982-01MR
Super FAP-G Series
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
High voltage
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
900
Unit
V
Remarks
Drain-source voltage
V
A
A
V
A
VGS=-30V
VDSX
ID
900
Continuous drain current
Pulsed drain current
2.6
ID(puls]
VGS
±10.4
±30
Gate-source voltage
Note *1
Note *2
Note *3
Repetitive or non-repetitive
IAR
2.6
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
mJ
EAS
349.1
Equivalent circuit schematic
EAR
dVDS/dt
3.2
40
mJ
<
VDS 900V
kV/µs
kV/µs
W
=
Drain(D)
dV/dt
PD
5
Note *4
32
°C
°C
Tc=25
2.16
+150
W
Ta=25
Operating and storage
Tch
°C
temperature range
<
Tstg
-55 to +150 °C
Gate(G)
Note *1 Tch 150°C
=
Source(S)
Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
Drain-source breakdown voltage
Gate threshold voltage
µ
V
900
ID= 250 A
VGS=0V
µ
V
3.0
5.0
25
ID= 250 A
VDS=VGS
µA
VDS=900V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=720V VGS=0V
VGS=±30V
VDS=0V
ID=1.3A VGS=10V
ID=1.3A VDS=25V
VDS=25V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
4.8
2.6
330
44
2.5
6.4
Ω
S
1.3
Ciss
pF
495
66
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
5.0
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=1.3A
ns
10.5
6.5
28
15.8
9.8
42
VGS=10V
td(off)
tf
Turn-off time toff
RGS=10 Ω
20
30
13
19.5
6.5
6.8
QG
nC
Total Gate Charge
VCC=450V
ID=2.6A
4.5
4.3
QGS
QGD
VSD
trr
Gate-Source Charge
Gate-Drain Charge
VGS=10V
1.00
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=2.6A VGS=0V Tch=25°C
IF=2.6A VGS=0V
-di/dt=100A/µs
1.5
4.0
µs
µC
Qrr
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
3.906
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
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