2SK3988-01
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220AB
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
Unit
V
Remarks
Drain-source voltage
V
A
A
V
A
VGS=-30V
VDSX
ID
600
Continuous drain current
Pulsed drain current
3.0
ID(puls]
VGS
±12.0
±30
Gate-source voltage
Note *1
Note *2
Note *3
Repetitive or non-repetitive
IAR
3.0
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
mJ
EAS
237.3
Equivalent circuit schematic
EAR
dVDS/dt
6.0
20
mJ
<
VDS 600V
kV/μs
kV/μs
W
=
Drain(D)
dV/dt
PD
5
Note *4
60
°C
°C
Tc=25
2.02
+150
W
Ta=25
Operating and storage
Tch
°C
temperature range
<
Tstg
-55 to +150 °C
Gate(G)
Note *1 Tch 150°C
=
Source(S)
Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
<
<
<
Note *4 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
μ
Drain-source breakdown voltage
Gate threshold voltage
ID= 250 A
VGS=0V
V
600
μ
V
ID= 250 A
VDS=VGS
3.0
5.0
25
μA
Tch=25°C
VDS=600V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=480V VGS=0V
VGS=±30V
VDS=0V
ID=1.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
2.64
3.0
330
50
2.5
11
5.0
3.30
Ω
S
1.5
ID=1.5A VDS=25V
VDS=25V
Ciss
pF
500
75
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
5.0
18
7.5
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=1.5A
ns
VGS=10V
23
10
13
35
15
20
td(off)
tf
Turn-off time toff
RGS=10 Ω
QG
nC
Total Gate Charge
VCC=300V
ID=3.0A
5.5
8.5
QGS
QGD
VSD
trr
Gate-Source Charge
Gate-Drain Charge
2.8
1.00
0.5
2.3
4.2
VGS=10V
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=3.0A VGS=0V Tch=25°C
IF=3.0A VGS=0V
-di/dt=100A/μs
μs
μC
Qrr
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
2.083
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
62.0
°C/W
http://www.fujielectric.co.jp/fdt/scd/
1
